VS-2EMH02HM3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 2 A FRED Pt
FEATURES
Hyperfast recovery time, reduced Q , and soft
rr
recovery
175 C maximum operating junction temperature
Specified for output and snubber operation
Low forward voltage drop
Cathode Anode
Low leakage current
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 C
SMA (DO-214AC)
AEC-Q101 qualified, meets JESD 201 class 2 whisker test
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
I 2 A
F(AV)
drop and hyperfast recovery time.
V 200 V
R
The planar structure and the platinum doped life time control
V at I 0.75 V
F F
guarantee the best overall performance, ruggedness, and
t 25 ns
rr
reliability characteristics.
T max. 175 C
J
These devices are intended for use in snubber, boost,
Package SMA (DO-214AC) lighting, piezo injection, as high frequency rectifiers, and
freewheeling diodes.
Circuit configuration Single
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS
Peak repetitive reverse voltage V 200 V
RRM
Average rectified forward current I T = 138 C 2
F(AV) Sp
A
Non-repetitive peak surge current I T = 25 C, 6 ms square pulse 50
FSM J
Operating junction and storage temperatures T , T -55 to +175 C
J Stg
ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage V , V I = 100 A 200 - -
BR R R
I = 2 A - 0.88 0.95 V
F
Forward voltage, per diode V
F
I = 2 A, T = 125 C - 0.75 0.82
F J
V = V rated - - 2
R R
Reverse leakage current, per diode I A
R
T = 125 C, V = V rated - 1 8
J R R
Junction capacitance C V = 200 V - 8 - pF
T R
Revision: 20-Sep-17 Document Number: 95833
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-2EMH02HM3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 24 -
F F R
I = 0.5 A, I = 1 A, I = 0.25 A - - 25
F R rr
Reverse recovery time t ns
rr
T = 25 C -16 -
J
= 125 C - 22 -
T
J
I = 2 A,
F
T = 25 C - 2 -
J
Peak recovery current I dI /dt = 200 A/s, A
RRM F
T = 125 C - 3 -
J
V = 160 V
R
T = 25 C - 16 -
J
Reverse recovery charge Q nC
rr
T = 125 C - 30 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
T , T -55 - 175 C
J Stg
temperature range
Device mounted on PCB with 2 x 3.5 mm
Thermal resistance, junction to case R -11 21 C/W
thJC
soldering lands
0.07 g
Approximate weight
0.002 oz.
Marking device Case style SMA (DO-214AC) 2H2
100 100
10 175 C
150 C
T = 175 C
J
10 1
125 C
0.1
1 0.01
25 C
T = 150 C
J
0.001
T = 125 C
J
T = 25 C
J
0.1 0.0001
0.4 0.8 1.2 1.6 2.0 2.4 050 100 150 200
V - Forward Voltage Drop (V) V - Reverse Voltage (V)
F R
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 20-Sep-17 Document Number: 95833
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
I - Instantaneous Forward Current (A)
F
I - Reverse Current (A)
R