VS-2EYH02-M3/H Vishay

333 3 VS-2EYH01-M3, VS-2EYH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 A FRED Pt FEATURES eSMP Series Low profile package Ideal for automated placement Low forward voltage drop, low power losses Low leakage current Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Top View Bottom View Class 2 whisker test SlimSMAW (DO-221AD) Compatible to SOD-128 package case outline Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES DESCRIPTION / APPLICATIONS 3D Models For use in high frequency, freewheeling, DC/DC converters, PFC, and in snubber industrial, and automotiv e applications. PRIMARY CHARACTERISTICS I 2 A F(AV) V 100 V, 200 V MECHANICAL DATA R V at I 0.69 V F F Case: SlimSMAW (DO-221AD) I 60 A Molding compound meets UL 94 V-0 flammability rating FSM Halogen-free, RoHS-compliant t (typ.) 15 ns rr T max. 175 C Terminals: matte tin plated leads, solderable per J J-STD-002 Package SlimSMAW (DO-221AD) Circuit configuration Single Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS VS-2EYH01-M3 100 Peak repetitive reverse V V RRM voltage VS-2EYH02-M3 200 (1) Average rectified forward current I T = 151 C 2 A F(AV) C Non-repetitive peak surge current I T = 25 C, 10 ms sine pulse wave 60 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg Note (1) Mounted on infinite heatsink ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS VS-2EYH01-M3 100 - - Breakdown voltage, blocking V , V I = 100 A BR R R voltage VS-2EYH02-M3 200 - - V I = 2 A - 0.86 0.93 F Forward voltage, per diode V F I = 2 A, T = 150 C - 0.69 0.75 F J V = V rated - - 2 R R Reverse leakage current, per diode I A R T = 150 C, V = V rated - - 20 J R R Junction capacitance C V = 200 V - 12 - pF T R Revision: 28-Jan-2021 Document Number: 96514 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-2EYH01-M3, VS-2EYH02-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 22 - F F R I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 15 - F F R Reverse recovery time t I = 0.5 A, I = 1A, I = 0.25 A - - 28 ns rr F R rr T = 25 C -16- J T = 125 C - 26 - J I = 2 A, F T = 25 C - 2.7 - J Peak recovery current I dI /dt = 200 A/s, A RRM F T = 125 C - 3.4 - J V = 100 V R T = 25 C - 20 - J Reverse recovery charge Q nC rr T = 125 C - 43 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -55 - 175 C J Stg (1) Thermal resistance, junction to mount R Infinite heatsink - 12 15 thJM C/W Device mounted on FR4 PCB, Thermal resistance, junction to ambient R - 120 150 thJA 2 oz. standard footprint VS-2EYH01-M3 2H1 Marking device Case style SlimSMAW (DO-221AD) VS-2EYH02-M3 2H2 Note (1) Thermal resistance junction to mount follows JEDEC 51-14 transient dual interface test method (TDIM) 100 100 175 C 10 150 C 10 1 T = 175 C 125 C J 0.1 25 C 1 0.01 T = 150 C J T = 125 C J 0.001 T = 25 C J T = -40 C J 0.1 0.0001 0.4 0.6 0.8 1.0 1.2 1.4 50 100 150 200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 28-Jan-2021 Document Number: 96514 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R