Product Information

VS-30CTH03-N3

VS-30CTH03-N3 electronic component of Vishay

Datasheet
Diode Switching 300V 30A Tube

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 1.746 ea
Line Total: USD 87.3

0 - Global Stock
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 50
Multiples : 50
50 : USD 1.746
100 : USD 1.5551

     
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VS-30CTH03PbF, VS-30CTH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 15 A FRED Pt FEATURES Base common Hyperfast recovery time cathode 2 Low forward voltage drop 175 C operating junction temperature Low leakage current Designed and qualified according to 2 Common JEDEC -JESD 47 cathode Anode Anode Material categorization: Available TO-220AB 13 for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY 300 V series are the state of the art hyperfast recovery Package TO-220AB rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery time. I 2 x 15 A F(AV) The planar structure and the platinum doped life time V 300 V R control, guarantee the best overall performance, V at I 0.85 V F F ruggedness and reliability characteristics. t typ. See Recovery table rr These devices are intended for use in the output rectification T max. 175 C J stage of SMPS, UPS, DC/DC converters as well Diode variation Common cathode as freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 300 V RRM per diode T = 153 C 15 C Average rectified forward current I F(AV) per device 30 A Non-repetitive peak surge current I T = 25 C 150 FSM C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 300 - - R blocking voltage V R V I = 15 A - 1.0 1.25 F Forward voltage V F I = 15 A, T = 125 C - 0.85 0.95 F J V = V rated - - 40 R R Reverse leakage current I A R T = 125 C, V = V rated - 8 200 J R R Junction capacitance C V = 300 V - 38 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S revision: 09-Jul-15 Document Number: 94016 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-30CTH03PbF, VS-30CTH03-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - - 36 F F R I = 1 A, dI /dt = 100 A/s, V = 30 V - - 30 F F R Reverse recovery time t ns rr T = 25 C -33 - J T = 125 C - 48 - J I = 15 A F T = 25 C - 2.8 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 6.5 - J V = 200 V R T = 25 C - 46 - J Reverse recovery charge Q nC rr T = 125 C - 160 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLMIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -65 - 175 C J Stg Thermal resistance, junction to case per diode R -- 1.4 C/W thJC Marking device Case style TO-220AB 30CTH03 100 100 T = 175 C J T = 150 C J 10 T = 125 C J T = 175 C T = 100 C 1 J J T = 125 C J 10 T = 75 C T = 25 C J J 0.1 T = 50 C J 0.01 T = 25 C J 1 0.001 0 50 100 150 200 250 300 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 100 T = 25 C J 10 0 10050 150200250300 V - Reverse Voltage (V) R Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage revision: 09-Jul-15 Document Number: 94016 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward F Current (A) C - Junction Capacitance (pF) T I - Reverse Current (mA) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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