Product Information

VS-30EPF10PBF

VS-30EPF10PBF electronic component of Vishay

Datasheet
Vishay Semiconductors Rectifiers 1000 Volt 30 Amp

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 8.0169
10 : USD 4.7121
100 : USD 3.8732
250 : USD 3.7489
500 : USD 3.3864
1000 : USD 3.2829
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
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VS-30.PF1.PbF Series, VS-30.PF1.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 30 A FEATURES Glass passivated pellet chip junction 150 C max. operating junction temperature Low forward voltage drop and short reverse 2 recovery time 3 3 2 Designed and qualified according to 1 1 JEDEC -JESD 47 TO-247AC modified TO-247AC Available Material categorization: Base Base cathode cathode for definitions of compliance please see 2, 4 2 www.vishay.com/doc 99912 APPLICATIONS These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as 1 3 well as in input rectification where severe restrictions on Anode Anode Cathode Anode 1 3 conducted EMI should be met. VS-30EPF1... VS-30APF1... DESCRIPTION PRODUCT SUMMARY The VS-30EPF1... and VS-30APF1... soft recovery rectifier Package TO-247AC modified (2 pins), TO-247AC series has been optimized for combined short reverse recovery time and low forward voltage drop. I 30 A F(AV) V 1000 V, 1200 V The glass passivation ensures stable reliable operation in R the most severe temperature and power cycling conditions. V at I 1.41 V F F I 350 A FSM t 95 ns rr T max. 150 C J Diode variation Single die Snap factor 0.6 MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 30 A F(AV) V 1000 to 1200 V RRM I 350 A FSM V 30 A, T = 25 C 1.41 V F J t 1 A, 100 A/s 95 ns rr T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-30EPF10PbF, VS-30APF10PbF 1000 1100 VS-30EPF10-M3, VS-30APF10-M3 6 VS-30EPF12PbF, VS-30APF12PbF 1200 1300 VS-30EPF12-M3, VS-30APF12-M3 Revision: 11-Feb-16 Document Number: 93705 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-30.PF1.PbF Series, VS-30.PF1.-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 95 C, 180 conduction half sine wave 30 F(AV) C 10 ms sine pulse, rated V applied 300 A RRM Maximum peak one cycle I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 350 10 ms sine pulse, rated V applied 450 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 636 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 6360 A s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 30 A, T = 25 C 1.41 V FM J Forward slope resistance r 10.09 m t T = 150 C J Threshold voltage V 0.992 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 6 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS I Reverse recovery time t 450 ns FM rr I at 30 A t F pk rr Reverse recovery current I 25 A/s 6.1 A rr t t a b t 25 C dir Reverse recovery charge Q 2.16 C rr dt Q rr Snap factor S Typical 0.6 I RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.8 thJC junction to case Maximum thermal resistance, R 40 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth and greased 0.2 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 30EPF10 Case style TO-247AC modified 30EPF12 Marking device 30APF10 Case style TO-247AC 30APF12 Revision: 11-Feb-16 Document Number: 93705 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC
BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
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General Semi
GENERAL SEMI.
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GS
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Vishay Electro-Films
Vishay Huntington
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Vishay Sprague
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Vishay Techno
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Vishay Vitramon
Vishay / BC Components
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Vishay / Dale
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Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
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Vishay / Milwaukee
Vishay / Polytech
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VISHAY ROEDERSTEIN
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Vishay Thin Film
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VISHAY/BC COMPONENTS
Vishay/Beyschlag
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VishayBC Components
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VishaySemiconductors
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VishayVitramon
VIT
VITRAMON (VISHAY)
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VSC
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