333 3 VS-3ECH01HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 3 A FRED Pt FEATURES Hyperfast recovery time, reduced Q , and soft rr recovery 175 C maximum operating junction temperature Cathode Anode Specified for output and snubber operation Low forward voltage drop Low leakage current SMC (DO-214AB) Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C AEC-Q101 qualified, meets JESD 201 class 2 whisker test LINKS TO ADDITIONAL RESOURCES Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3D Models DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. PRIMARY CHARACTERISTICS The planar structure and the platinum doped life time control I 3 A F(AV) guarantee the best overall performance, ruggedness, and V 100 V R reliability characteristics. V at I 0.69 V F F These devices are intended for use in snubber, boost, t 25 ns rr lighting, piezo-injection, as high frequency rectifiers, an d T max. 175 C freewheeling diodes. J Package SMC (DO-214AB) The extremely optimized stored charge and low recovery current minimize the switching losses and reduce power Circuit configuration Single dissipation in the switching element. MECHANICAL DATA Case: SMC (DO-214AB) Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 100 V RRM Average rectified forward current I T = 142 C 3 F(AV) Sp A Non-repetitive peak surge current I T = 25 C, 6 ms square pulse 130 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 100 - - BR R R I = 3 A - 0.83 0.90 V F Forward voltage, per diode V F I = 3 A, T = 125 C - 0.69 0.75 F J V = V rated - - 2 R R Reverse leakage current, per diode I A R T = 125 C, V = V rated - 1 10 J R R Junction capacitance C V = 100 V - 23 - pF T R Revision: 13-Apr-2021 Document Number: 95835 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-3ECH01HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 27 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 25 F R rr Reverse recovery time t ns rr T = 25 C -18- J T = 125 C - 30 - J I = 3 A, F T = 25 C - 2.1 - J Peak recovery current I dI /dt = 200 A/s, A RRM F T = 125 C - 4 - J V = 100 V R T = 25 C - 19 - J Reverse recovery charge Q nC rr T = 125 C - 60 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -55 - 175 C J Stg temperature range Device mounted on PCB with 2 x 3.5 mm Thermal resistance, junction to mount R -7.7 14 C/W thJM soldering lands 0.24 g Approximate weight 0.008 oz. Marking device Case style SMC (DO-214AB) 3H1 100 1000 100 T = 175 C J T = 175 C J 10 10 T = 150 C J T = 125 C J 1 1 0.1 T = 150C T = 25 C J J T = 125C J 0.01 T = 25 C J T = -40 C J 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20406080 100 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 13-Apr-2021 Document Number: 95835 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R