333 3 VS-3EJH01HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 3 A FRED Pt FEATURES Hyperfast recovery time, reduced Q , and eSMP Series rr soft recovery 175 C maximum operating junction temperature Specific for output and snubber operation Low forward voltage drop Bottom View Top View Low leakage current Meets MSL level 1, per J-STD-020, LF maximum peak SlimSMA (DO-221AC) of 260 C AEC-Q101 qualified, meets JESD 201 class 2 whisker test Cathode Anode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage 3D Models drop and hyperfast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and PRIMARY CHARACTERISTICS reliability characteristics. I 3 A These devices are intended for use in snubber, boost, F(AV) lighting, piezo-injection, as high frequency rectifiers and V 100 V R freewheeling diodes. V at I 0.74 V F F The extremely optimized stored charge and low recovery t 30 ns rr current minimize the switching losses and reduce power T max. 175 C J dissipation in the switching element. Package SlimSMA (DO-221AC) MECHANICAL DATA Circuit configuration Single Case: SlimSMA (DO-221AC) Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 100 V RRM (1) Average rectified forward current I T = 145 C 3 F(AV) C A Non-repetitive peak surge current I T = 25 C 85 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg Note (1) Device on PCB with 8 mm x 16 mm soldering lands ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 100 - - BR R R I = 3 A - 0.86 0.93 V F Forward voltage V F I = 3 A, T = 125 C - 0.74 0.78 F J V = V rated - - 2 R R Reverse leakage current I A R T = 125 C, V = V rated - 0.5 8 J R R Junction capacitance C V = 100 V - 13 - pF T R Revision: 28-Jan-2021 Document Number: 94904 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-3EJH01HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 26 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 30 F R rr Reverse recovery time t ns rr T = 25 C -18- J T = 125 C - 26 - J I = 3 A F T = 25 C - 2.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4 - J V = 160 V R T = 25 C - 23 - J Reverse recovery charge Q nC rr T = 125 C - 50 - J THERMAL - MECHANICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -65 - 175 C J Stg storage temperature range Thermal resistance, Device mounted on PCB with R -8 10 thJM junction to mount 8 mm x 16 mm soldering lands C/W Thermal resistance, Device mounted on PCB with R - 91 110 thJA junction to ambient 2 mm x 3.5 mm soldering lands 0.032 g Approximate Weight 0.0011 oz. Marking device Case style SlimSMA (DO-221AC) 3H1 100 100 T = 175 C J 10 T = 150 C J T = 175 C 10 J 1 T = 125 C J 0.1 T = 150 C J 0.01 1 T = 125 C J T = 25 C J T = 25 C J 0.001 T = -40 C J 0.1 0.0001 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 20406080 100 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 28-Jan-2021 Document Number: 94904 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R