VS-60EPU04HN3, VS-60APU04HN3 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt FEATURES Ultrafast recovery time Low forward voltage drop 175 C operating junction temperature 2 AEC-Q101 qualified, meets JESD 201 class 1A 3 3 2 whisker test 1 1 Material categorization: TO-247AC TO-247AC modified for definitions of compliance please see Available www.vishay.com/doc 99912 Cathode Cathode to base to base 2 2 BENEFITS Reduced RFI and EMI Higher frequency operation Reduced snubbing 1 3 1 3 Reduced parts count Cathode Anode Anode Anode VS-60EPU04HN3 VS-60APU04HN3 DESCRIPTION / APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in PRODUCT SUMMARY high frequency power conditioning systems. TO-247AC modified (2 pins), The softness of the recovery eliminates the need for a Package TO-247AC snubber in most applications. These devices are ideally I 60 A F(AV) suited for HF welding, power converters and other V 400 V R applications where switching losses are not significant V at I 0.87 V F F portion of the total losses. t typ. See Recovery table rr T max. 175 C J Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 400 V R Continuous forward current I T = 127 C 60 F(AV) C Single pulse forward current I T = 25 C 600 A FSM C Maximum repetitive forward current I Square wave, 20 kHz 120 FRM Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 400 - - R blocking voltage V R I = 60 A - 1.05 1.25 F V Forward voltage V I = 60 A, T = 175 C - 0.87 1.03 F F J I = 60 A, T = 125 C - 0.93 1.10 F J V = V rated - - 50 A R R Reverse leakage current I R T = 150 C, V = V rated - - 2 mA J R R Junction capacitance C V = 400 V - 50 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 3.5 - nH S Revision: 10-Jul-15 Document Number: 95794 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-60EPU04HN3, VS-60APU04HN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 200 A/s, V = 30 V - 50 - F F R Reverse recovery time t T = 25 C -85 - ns rr J T = 125 C - 145 - J I = 60 A F T = 25 C - 8.8 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 15.4 - J V = 200 V R T = 25 C - 375 - J Reverse recovery charge Q nC rr T = 125 C - 1120 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, R --0.70 thJC junction to case K/W Thermal resistance, Mounting surface, flat, smooth R -0.2 - thCS case to heatsink and greased -5.5 - g Weight -0.2 - oz. 1.2 2.4 N m - (10) (20) (lbf in) Mounting torque Case style TO-247AC modified 60EPU04H Marking device Case style TO-247AC 60APU04H 1000 1000 100 T = 175 C J 100 10 T = 125 C J 1 T = 175 C J T = 125 C J 10 0.1 T = 25 C J T = 25 C J 0.01 1 0.001 0 100 200 300 400 0 0.5 1 1.5 2 2.5 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 10-Jul-15 Document Number: 95794 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R