VS-60EPS..-M3 Series www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode Very low forward voltage drop 150 C max. operating junction temperature 2 Glass passivated pellet chip junction 1 Designed and qualified according to Available JEDEC -JESD 47 33 Material categorization: for definitions of compliance TO-247AC 2L 13 please see www.vishay.com/doc 99912 Cathode Anode APPLICATIONS Input rectification PRIMARY CHARACTERISTICS Vishay Semiconductors switches and output rectifiers I 60 A F(AV) which are available in identical package outlines V 800 V to 1200 V R DESCRIPTION V at I 1.09 V F F I 1000 A High voltage rectifiers optimized for very low forward FSM voltage drop with moderate leakage. T max. 150 C J These devices are intended for use in main rectification Package TO-247AC 2L (single or three phase bridge). Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 60 A F(AV) V 800/1200 V RRM I 1000 A FSM V 60 A, T = 25 C 1.09 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM RSM V , MAXIMUM I RRM RRM NON-REPETITIVE PEAK REVERSE PART NUMBER PEAK REVERSE VOLTAGE AT 150 C VOLTAGE V mA V VS-60EPS08-M3 800 900 1 VS-60EPS12-M3 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 118 C, 180 conduction half sine wave 60 F(AV) C Maximum peak one cycle 10 ms sine pulse, rated V applied 840 A RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 1000 10 ms sine pulse, rated V applied 3530 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 4220 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 42 200 A s Revision: 16-Jun-2021 Document Number: 94345 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-60EPS..-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS 30 A, T = 25 C 1.0 V J Maximum forward voltage drop V FM 60 A, T = 25 C 1.09 V J Forward slope resistance r 3.96 m t T = 150 C J Threshold voltage V 0.74 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 1.0 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.35 thJC unction to case Maximum thermal resistance, R 40 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth, and greased 0.2 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Case style TO-247AC 2L 60EPS08 Marking device Case style TO-247AC modified 60EPS12 Revision: 16-Jun-2021 Document Number: 94345 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000