Product Information

VS-6ESH01HM386A

VS-6ESH01HM386A electronic component of Vishay

Datasheet
Vishay Semiconductors Rectifiers Hypfst Rct 6A 100V AEC-Q101

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4025 ea
Line Total: USD 1.4

7461 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3593 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 0.897
10 : USD 0.7751
100 : USD 0.537
500 : USD 0.4497
1000 : USD 0.3772
1500 : USD 0.3438
3000 : USD 0.3381

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Product
Brand
Tradename
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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333 3 VS-6ESH01HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 6 A FRED Pt FEATURES eSMP Series Hyperfast recovery time, reduced Q , and rr soft recovery K 175 C maximum operating junction Anode 1 K temperature Cathode Specified for output and snubber operation Anode 2 1 Low forward voltage drop 2 Low leakage current Meets MSL level 1, per J-STD-020, LF maximum peak SMPC (TO-277A) of 260 C AEC-Q101 qualified, meets JESD 201 class 2 whisker test LINKS TO ADDITIONAL RESOURCES Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS 3D Models State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage PRIMARY CHARACTERISTICS drop and hyperfast recovery time. I 6 A The planar structure and the platinum doped life time control F(AV) guarantee the best overall performance, ruggedness, and V 100 V R reliability characteristics. V at I 0.74 V F F These devices are intended for use in snubber, boost, t 28 ns rr (typ.) lighting, piezo-injection, as high frequency rectifiers and T max. 175 C J freewheeling diodes. Package SMPC (TO-277A) The extremely optimized stored charge and low recovery Circuit configuration Single current minimize the switching losses and reduce power dissipation in the switching element. MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS compliant Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 100 V RRM Average rectified forward current I T = 160 C 6 F(AV) Sp A Non-repetitive peak surge current I T = 25 C 150 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 100 - - BR R R I = 6 A - 0.87 0.94 V F Forward voltage V F I = 6 A, T = 125 C - 0.74 0.8 F J V = V rated - - 2 R R Reverse leakage current I A R T = 125 C, V = V rated - 2 15 J R R Junction capacitance C V = 100 V - 43 - pF T R Revision: 21-Jan-2021 Document Number: 95703 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-6ESH01HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 28 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 25 F R rr Reverse recovery time t ns rr T = 25 C -22- J T = 125 C - 33 - J I = 6 A F T = 25 C - 2.4 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 5.0 - J V = 160 V R T = 25 C - 27 - J Reverse recovery charge Q nC rr T = 125 C - 80 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -55 - 175 C J Stg temperature range Thermal resistance, junction to mount R -2.2 3 thJM C/W Thermal resistance, junction to ambient R -85 - thJA 0.1 g Approximate weight 0.0035 oz. Marking device Case style SMPC (TO-277A) NEH1 100 100 175 C 150 C 10 125 C 10 1 T = 175 C J 0.1 T = 150 C J 25 C 1 T = 125 C J T = 25 C 0.01 J T = -40 C J 0.001 0.1 0 255075 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 21-Jan-2021 Document Number: 95703 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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