VS-6F(R) Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 6 A FEATURES High surge current capability Stud cathode and stud anode version Wide current range Types up to 1200 V V RRM Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DO-4 (DO-203AA) TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS Converters I 6 A F(AV) Power supplies Package DO-4 (DO-203AA) Machine tool controls Circuit configuration Single Battery charges MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 6A I F(AV) T 160 C C I 9.5 A F(RMS) 50 Hz 159 I A FSM 60 Hz 167 50 Hz 134 2 2 I t A s 60 Hz 141 V Range 100 to 1200 V RRM T -65 to +175 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM RSM V , MAXIMUM REPETITIVE I MAXIMUM RRM RRM TYPE VOLTAGE NON-REPETITIVE PEAK PEAK REVERSE VOLTAGE AT T = 175 C J NUMBER CODE REVERSE VOLTAGE V mA V 10 100 150 20 200 275 40 400 500 VS-6F(R) 60 600 725 12 80 800 950 100 1000 1200 120 1200 1400 Revision: 11-Jan-18 Document Number: 93519 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-6F(R) Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 6A Maximum average forward current I 180 conduction, half sine wave F(AV) at case temperature 160 C Maximum RMS forward current I 9.5 A F(RMS) t = 10 ms 159 No voltage reapplied t = 8.3 ms 167 Maximum peak, one cycle forward, I A FSM non-repetitive surge current t = 10 ms 134 100 % V RRM Sinusoidal half wave, reapplied t = 8.3 ms 141 initial T = J t = 10 ms 127 No voltage T maximum J reapplied t = 8.3 ms 116 2 2 2 Maximum I t for fusing I t A s t = 10 ms 90 100 % V RRM reapplied t = 8.3 ms 82 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 1270 A s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.63 F(TO)1 F(AV) F(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 0.86 F(TO)2 F(AV) J J Low level value of forward slope resistance r (16.7 % x x I < I < x I ), T = T maximum 15.7 f1 F(AV) F(AV) J J m High level value of forward slope resistance r (I > x I ), T = T maximum 5.6 f2 F(AV) J J Maximum forward voltage drop V I = 19 A, T = 25 C, t = 400 s rectangular wave 1.10 V FM pk J p THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction temperature range T -65 to +175 J C Maximum storage temperature range T -65 to +200 Stg Maximum thermal resistance, R DC operation 2.5 thJC junction to case K/W Maximum thermal resistance, R Mounting surface, smooth, flat and greased 0.5 thCS case to heat sink Lubricated threads 1.2 N m Mounting torque, 10 % (Not lubricated threads) (1.5) (lbf in) 7g Approximate weight 0.25 oz. Case style See dimensions - link at the end of datasheet DO-4 (DO-203AA) R CONDUCTION thJC CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180 0.34 0.29 120 0.44 0.48 90 0.57 0.63 T = T maximum K/W J J 60 0.85 0.88 30 1.37 1.39 Note The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJC Revision: 11-Jan-18 Document Number: 93519 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000