VS-70HF(R) Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes (Stud Version), 70 A FEATURES High surge current capability Designed for a wide range of applications Stud cathode and stud anode version Leaded version available Types up to 1600 V V RRM Designed and qualified for industrial level Material categorization: for definitions of compliance DO-203AB (DO-5) please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS Converters PRODUCT SUMMARY I 70 A Power supplies F(AV) Package DO-203AB (DO-5) Machine tool controls Circuit configuration Single diode Battery charges MAJOR RATINGS AND CHARACTERISTICS 70HF(R) PARAMETER TEST CONDITIONS UNITS 10 TO 120 140/160 70 70 A I F(AV) T 140 110 C C I 110 110 A F(RMS) 50 Hz 1200 1200 I A FSM 60 Hz 1250 1250 50 Hz 7100 7100 2 2 I t A s 60 Hz 6450 6450 V Range 100 to 1200 1400/1600 V RRM T -65 to +180 -65 to +150 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM RRM RSM V , MINIMUM I MAXIMUM R(BR) RRM TYPE VOLTAGE REPETITIVE PEAK NON-REPETITIVE PEAK AVALANCHE VOLTAGE AT T = T MAXIMUM J J NUMBER CODE REVERSE VOLTAGE REVERSE VOLTAGE V mA V V 10 100 200 200 20 200 300 300 15 30 300 400 400 40 400 500 500 60 600 720 725 VS-70HF(R) 80 800 960 950 9 100 1000 1200 1150 120 1200 1440 1350 140 1400 1650 1550 4.5 160 1600 1900 1750 Revision: 06-Mar-17 Document Number: 93521 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-70HF(R) Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION 70HF(R) PARAMETER SYMBOL TEST CONDITIONS UNITS 10 to 120 140/160 70 A Maximum average forward current I 180 conduction, half sine wave F(AV) at case temperature 140 110 C Maximum RMS forward current I 110 A F(RMS) t = 10 ms 1200 No voltage reapplied t = 8.3 ms 1250 Maximum peak, one cycle forward, I A FSM non-repetitive surge current t = 10 ms 1000 100 % V RRM reapplied t = 8.3 ms 1050 Sinusoidal half wave, initial T = T maximum t = 10 ms J J 7100 No voltage reapplied t = 8.3 ms 6450 2 2 2 Maximum I t for fusing I t A s t = 10 ms 5000 100 % V RRM reapplied t = 8.3 ms 4550 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 71 000 A s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.79 F(TO)1 F(AV) F(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 1.00 F(TO)2 F(AV) J J Low level value of forward r (16.7 % x x I < I < x I ), T = T maximum 2.33 f1 F(AV) F(AV) J J slope resistance m High level value of forward r (I > x I ), T = T maximum 1.53 f2 F(AV) J J slope resistance Maximum forward voltage drop V I = 220 A, T = 25 C, t = 400 s rectangular wave 1.35 1.46 V FM pk J p THERMAL AND MECHANICAL SPECIFICATIONS 70HF(R) PARAMETER SYMBOL TEST CONDITIONS UNITS 10 to 120 140/160 Maximum junction and T , T -65 to +180 -65 to +150 C J Stg storage temperature range Maximum thermal resistance, R DC operation 0.45 thJC junction to case K/W Thermal resistance, case to heatsink R Mounting surface, smooth, flat and greased 0.25 thCS (1) Not lubricated thread, tighting on nut 3.4 (30) (1) Lubricated thread, tighting on nut 2.3 (20) Maximum allowable mounting torque N m (2) (+0 %, -10 %) (lbf in) Not lubricated thread, tighting on hexagon 4.2 (37) (2) Lubricated thread, tighting on hexagon 3.2 (28) 17 g Approximate weight 0.6 oz. Case style See dimensions - link at the end of datasheet DO-203AB (DO-5) Notes (1) Recommended for pass-through holes (2) Recommended for holed threaded heatsinks R CONDUCTION thJC CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180 0.08 0.06 120 0.10 0.11 90 0.13 0.14 T = T maximum K/W J J 60 0.19 0.20 30 0.30 0.30 Note The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJC Revision: 06-Mar-17 Document Number: 93521 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000