VS-8ETL06SPbF, VS-8ETL06-1PbF www.vishay.com Vishay Semiconductors Ultralow V Hyperfast Rectifier for Discontinuous Mode PFC, F 8 A FRED Pt FEATURES Benchmark ultralow forward voltage drop Hyperfast recovery time Low leakage current 175 C operating junction temperature 2 TO-263AB (D PAK) TO-262AA Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Base AEC-Q101 qualified cathode 2 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION State of the art, ultralow V , soft-switching hyperfast F 1 3 1 3 rectifiers optimized for discontinuous (critical) mode (DCM) N/C Anode N/C Anode power factor correction (PFC). VS-8ETL06SPbF VS-8ETL06-1PbF The minimized conduction loss, optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and PRODUCT SUMMARY snubbers. 2 Package TO-263AB (D PAK), TO-262AA The device is also intended for use as a freewheeling diode in power supplies and other power switching applications. I 8 A F(AV) V 600 V R APPLICATIONS V at I 0.81 V F F AC/DC SMPS 70 W to 400 W t typ. 60 ns rr e.g. laptop and printer AC adaptors, desktop PC, TV and T max. 175 C monitor, games units and DVD AC/DC power supplies. J Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX.UNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 160 C 8 F(AV) C Non-repetitive peak surge current I T = 25 C 175 A FSM J Peak repetitive forward current I 16 FM Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 8 A - 0.96 1.05 F Forward voltage V F I = 8 A, T = 150 C - 0.81 0.86 F J V = V rated - 0.05 5 R R Reverse leakage current I A R T = 150 C, V = V rated - 20 100 J R R Junction capacitance C V = 600 V - 17 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 15-Nov-16 Document Number: 94029 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-8ETL06SPbF, VS-8ETL06-1PbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 60 100 F F R I = 8 A, dI /dt = 100 A/s, V = 30 V - 150 250 F F R Reverse recovery time t ns rr T = 25 C - 170 - J T = 125 C - 250 - J I = 8 A F T = 25 C - 15 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 20 - J V = 390 V R T = 25 C - 1.3 - J Reverse recovery charge Q C rr T = 125 C - 2.6 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -1.42 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient per leg Thermal resistance, Mounting surface, flat, smooth and R -0.5 - thCS case to heatsink greased -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Case style TO-263AB (D PAK) 8ETL06S Marking device Case style TO-262 8ETL06-1 Revision: 15-Nov-16 Document Number: 94029 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000