VS-C16CP07L-M3 www.vishay.com Vishay Semiconductors 650 V Power SiC Merged PIN Schottky Diode, 2 x 8 A FEATURES Base common cathode Majority carrier diode using Schottky technology 2 on SiC wide band gap material temperature coefficient, for easy Positive V F paralleling Virtually no recovery tail and no switching losses 1 2 Temperature invariant switching behavior 1 2 3 Anode Anode 3 175 C maximum operating junction temperature TO-247AD 3L Common MPS structure for high ruggedness to forward current Cathode surge events Meets JESD 201 class 1A whisker test Solder Bath temperature 275 C maximum, 10 s per JESD 22-B106 Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 I 2 x 8 A F(AV) V 650 V R DESCRIPTION / APPLICATIONS V at I at 150 C 1.70 V F F Wide band gap SiC based 650 V Schottky diode, designed T max. 175 C J for high performance and ruggedness. I at V at 175 C 5 A R R Optimum choice for high speed hard switching and efficient Q (V = 400 V) 21.5 nC operation over a wide temperature range, it is also C R recommended for all applications suffering from Silicon Package TO-247AD 3L ultrafast recovery behavior. Circuit configuration Common cathode Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters. MECHANICAL DATA Case: TO-247AD 3L Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Mounting torque: 10 in-lbs maximum ABSOLUTE MAXIMUM RATINGS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 650 V RRM Average rectified forward current, per leg I T = 134 C (DC) 8 A F(AV) C DC blocking voltage V 650 V DC Repetitive peak surge current, per leg I T = 25 C, f = 50 Hz, square wave, DC = 25 % 33 FRM C T = 25 C, t = 10 ms, half sine wave 53 A C p Non-repetitive peak forward surge current, per leg I FSM T = 110 C, t = 10 ms, half sine wave 40 C p T = 25C 65 C (1) Power dissipation, per leg P W tot = 110 C 28 T C T = 25C 14 C 2 2 2 I t value, per leg A s i dt T = 110 C 8 C (2) Operating junction and storage temperatures T , T -55 to +175 C J Stg Notes (1) Based on maximum R th (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA Revision: 13-Jul-2020 Document Number: 96728 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-C16CP07L-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 8 A - 1.50 1.8 F Forward voltage, per leg V I = 8 A, T = 150 C - 1.70 2.10 V F F J I = 8 A, T = 175 C - 1.80 - F J V = V rated - - 45 R R Reverse leakage current, per leg I V = V rated, T = 150 C - - 100 A R R R J V = V rated, T = 175 C - 5 - R R J V = 1 V, f = 1 MHz - 320 - R Total capacitance, per leg C pF V = 400 V, f = 1 MHz - 36 - R Total capacitive charge, per leg Q V = 400 V, f = 1 MHz - 21.5 - nC C R THERMAL - MECHANICAL SPECIFICATIONS (T = 25 C unless otherwise specified) A PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS per leg - 1.65 2.3 Thermal resistance, junction-to-case R C/W thJC per device - 1.0 1.4 Marking device C16CP07L Axis Title Axis Title 16 10000 1000 10000 14 T = 25 C J 12 1000 1000 10 T = -55 C J T = 125 C J 8 T = 150 C 100 J T = 175 C J 6 100 100 4 2 T = 25 C J f = 1.0 MHz 0 10 10 10 0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1 10 100 1000 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics, Per Leg Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage, Per Leg Axis Title Axis Title 10 10000 1000 10000 1 1000 1000 T = 25 C J 100 0.1 T = 175 C J T = 110 C J 100 100 T =150 C J 0.01 T = 125 C J T = 25 C J T = -55 C J 0.001 10 10 10 0.0001 0.001 0.01 0 100 200300 400500 600700 t (s) V - Reverse Voltage (V) p R Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage, Fig. 4 - Non-Repetitive Peak Forward Surge Current vs. Per Leg Pulse Duration, Per Leg (Square Wave) Revision: 13-Jul-2020 Document Number: 96728 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2nd line 2nd line I - Reverse Current (A) I - Instantaneous Forward Current (A) R F 1st line 1st line 2nd line 2nd line 2nd line 2nd line I (A) C - Junction Capacitance (pF) FSM T 1st line 1st line 2nd line 2nd line