VS-C20ET07T-M3 www.vishay.com Vishay Semiconductors 650 V Power SiC Merged PIN Schottky Diode, 20 A FEATURES Majority carrier diode using Schottky technology Base cathode on SiC wide band gap material 2 2 Positive V temperature coefficient for easy F paralleling Virtually no recovery tail and no switching losses 1 Temperature invariant switching behavior 1 3 175 C maximum operating junction temperature 3 Cathode Anode 2L TO-220AC MPS structure for high ruggedness to forward current surge events Meets JESD 201 class 1A whisker test Solder Bath temperature 275 C maximum, 10 s per JESD 22-B106 PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance I 20 A F(AV) please see www.vishay.com/doc 99912 V 650 V R DESCRIPTION / APPLICATIONS V at I at 150 C 1.6 V F F T max. 175 C Wide band gap SiC based 650 V Schottky diode, designed J for high performance and ruggedness. I at V at 175 C 35 A R R Q (V = 400 V) 68 nC Optimum choice for high speed hard switching and efficient C R operation over a wide temperature range, it is also Package 2L TO-220AC recommended for all applications suffering from Silicon Circuit configuration Single ultrafast recovery behavior. Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters. MECHANICAL DATA Case: 2L TO-220AC Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Mounting torque: 10 in-lbs maximum ABSOLUTE MAXIMUM RATINGS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 650 V RRM Average rectified forward current I T = 125 C (DC) 20 A F(AV) C DC blocking voltage V 650 V DC Repetitive peak surge current I T = 25 C, f = 50 Hz, square wave, DC = 25 % 75 FRM C T = 25 C, t = 10 ms, half sine wave 160 A C p Non-repetitive peak forward surge current I FSM T = 110 C, t = 10 ms, half sine wave 140 C p T = 25 C 119 C (1) Power dissipation P W tot T = 110 C 52 C T = 25 C 128 C 2 2 2 I t value i dt A s T = 110 C 98 C (2) Operating junction and storage temperatures T , T -55 to +175 C J Stg Notes (1) Based on maximum R th (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA Revision: 03-Jul-2020 Document Number: 96726 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-C20ET07T-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 20 A - 1.45 1.70 F Forward voltage V I = 20 A, T = 150 C - 1.60 1.90 V F F J I = 20 A, T = 175 C - 1.65 - F J V = V rated - - 100 R R Reverse leakage current I V = V rated, T = 150 C - - 250 A R R R J V = V rated, T = 175 C - 35 - R R J V = 1 V, f = 1 MHz - 1050 - R Total capacitance C pF V = 400 V, f = 1 MHz - 105 - R Total capacitive charge Q V = 400 V, f = 1 MHz - 68 - nC C R THERMAL - MECHANICAL SPECIFICATIONS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, junction-to-case R -0.91.3C/W thJC Marking device C20ET07T Axis Title Axis Title 40 10000 10 000 10000 35 30 T = 25 C J 1000 1000 1000 25 T = -55 C J T = 125 C J 20 T = 150 C J T = 175 C J 15 100 100 100 10 5 T = 25 C J f = 1.0 MHz 0 10 10 10 0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1 10 100 1000 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Axis Title Axis Title 100 10000 1000 10000 10 T = 25 C J 1000 1000 T = 175 C 1 J T = 110 C J 100 T =150 C J 0.1 100 100 T = 125 C J 0.01 T = 25 C J T = -55 C J 0.001 10 10 10 0 100 200 300 400 500 600 700 0.0001 0.001 0.01 V - Reverse Voltage (V) tp (s) R Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 4 - Non-Repetitive Peak Forward Surge Current vs. Pulse Duration (Square Wave) Revision: 03-Jul-2020 Document Number: 96726 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2nd line 2nd line I - Reverse Current (A) I - Instantaneous Forward Current (A) R F 1st line 1st line 2nd line 2nd line 2nd line 2nd line C - Junction Capacitance (pF) I (A) FSM T 1st line 1st line 2nd line 2nd line