333 3 VS-CZH6106FP-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 30 A FRED Pt FEATURES Hyperfast soft recovery time Low forward voltage drop 175 C operating junction temperature 2 Common Low leakage current cathode 1 3 Fully isolated package (V = 2500 V ) INS RMS Anode Anode 1 Designed and qualified according to JEDEC -JESD 47 2 TO-3PF 3 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES DESCRIPTION / APPLICATIONS Hyperfast recovery rectifiers designed with optimized 3D Models performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and PRIMARY CHARACTERISTICS reliability characteristics. I 30 A F(AV) These devices are intended for use in PFC boost stage in th e V 600 V R AC/DC section of switch mode power supplies and inverters V at I 1.40 V (air conditioning, high-frequency welding, UPS, and motor F F drives) t (typ.) 22 ns rr T max. 175 C The extremely optimized stored charge and low recovery J current minimize the switching losses and reduce over Package TO-3PF dissipation in the switching element and snubbers. Circuit configuration Common cathode MECHANICAL DATA Case: TO-3PF Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current in DC, per leg I 30 F(AV) A Non-repetitive peak surge current, per leg I T = 25 C, both anodes connection 280 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 30 A - 1.70 2.15 F Forward voltage, per leg V F I = 30 A, T = 150 C - 1.40 1.65 F J V = V rated - 0.02 10 R R Reverse leakage current, per leg I A R T = 150 C, V = V rated - 36 300 J R R Junction capacitance, per leg C V = 600 V - 19 - pF T R Revision: 17-Dec-2020 Document Number: 96829 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DVS-CZH6106FP-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 22 - F F R Reverse recovery time, per leg t T = 25 C -90 - ns rr J T = 125 C - 110 - J I = 30 A, F T = 25 C - 4.1 - J Peak recovery current, per leg I dI /dt = 200 A/s, A RRM F T = 125 C - 9.4 - J V = 400 V R T = 25 C - 230 - J Reverse recovery charge, per leg Q nC rr T = 125 C - 730 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -55 - 175 C J Stg temperature range Thermal resistance, R -2.302.90 thJC junction-to-case, per leg Thermal resistance, R Typical socket mount - 30 - C/W thJA junction-to-ambient, per leg Typical thermal resistance, R Mounting surface, flat, smooth, and greased - 0.5 - thCS case-to-heatsink -6.2 - g Weight -0.21 - oz. 4 6 kgf cm Mounting torque - (3.5) (5.3) (lbf in) Marking device Case style TO-3PF CZH6106FP Revision: 17-Dec-2020 Document Number: 96829 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000