333 3 VS-E5TW1206FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 12 A FRED Pt G5 FEATURES Best in class forward voltage drop and switching losses trade off Optimized for high speed operation 1 2 175 C maximum operating junction temperature 1 Cathode Anode Polyimide passivation 2 Fully isolated package (V =2500 V ) INS RMS TO-220 FullPAK 2L True 2 pin package Designed and qualified according to JEDEC - JESD 47 LINKS TO ADDITIONAL RESOURCES Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3D Models Application Notes DESCRIPTION / APPLICATIONS Featuring a unique combination of low conduction and PRIMARY CHARACTERISTICS switching losses, this rectifier is the right choice for sof t I 12 A F(AV) switched and resonant converters, as well as medium V 600 V R frequency hard switching converters. This device is V at I at 125 C 1.75 V F F specifically designed to improve as output rectifier fo r t (typ.) 16 ns DC/DC stage in resonant converters and as PFC rectifier for rr aircon and industrial power supplies. T max. 175 C J Package TO-220 FullPAK 2L MECHANICAL DATA Circuit configuration Single Case: TO-220 FullPAK 2L Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current in DC I T = 100 C, DC 12 F(AV) C A Non-repetitive peak surge current I T = 25 C, t = 10 ms, sine wave 110 FSM C p Operating junction and storage temperature T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS V , BR Breakdown voltage, blocking voltage I = 100 A 600 - - R V R V I = 12 A - 2.35 3.35 F Forward voltage V F I = 12 A, T = 125 C - 1.75 - F J V = V rated - - 10 R R Reverse leakage current I A R T = 125 C, V = V rated - - 500 J R R Junction capacitance C V = 600 V - 10 - pF T R Series inductance L Measured to lead 5 mm from package body - 8 - nH S Revision: 07-Jun-2022 Document Number: 96976 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DVS-E5TW1206FP-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A,dI /dt = 100 A/s, V = 30 V - 16 - F F R Reverse recovery time t T = 25 C -25 - ns rr J T = 125 C - 30 - J I = 8 A F T = 25 C - 7.5 - J Peak recovery current I dI /dt = 1000 A/s A RRM F T = 125 C - 13 - J V = 400 V R T = 25 C - 75 - J Reverse recovery charge Q nC rr T = 125 C - 225 - J T = 25 C -26 - J Reverse recovery time t ns rr T = 125 C - 32 - J I = 12 A F T = 25 C - 9 - J Peak recovery current I dI /dt = 1000 A/s A RRM F T = 125 C - 14 - J V = 400 V R T = 25 C - 90 - J Reverse recovery charge Q nC rr T = 125 C - 275 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, junction-to-case R --3.5C/W thJC Weight -2.0 - g 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Maximum junction and storage temperature range T , T -55 - 175 C J Stg Case style Marking device E5TW1206FP TO-220 FullPAK 2L Revision: 07-Jun-2022 Document Number: 96976 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000