333 3 VS-E5TX1506FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt G5 FEATURES Best in class forward voltage drop and switching losses trade off Optimized for high speed operation 1 2 175 C maximum operating junction temperature 1 Cathode Anode Polyimide passivation 2 Fully isolated package (V =2500 V ) INS RMS TO-220 FullPAK 2L True 2 pin package Designed and qualified according to JEDEC - JESD 47 LINKS TO ADDITIONAL RESOURCES Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3D Models Application Notes DESCRIPTION / APPLICATIONS Featuring a unique combination of low conduction and PRIMARY CHARACTERISTICS switching losses, this rectifier is the right choice for sof t I 15 A F(AV) switched and resonant converters, as well as medium V 600 V R frequency hard switching converters. This device is V at I at 125 C 1.3 V F F specifically designed to improve as output rectifier fo r t (typ.) 19 ns DC/DC stage in resonant converters and as PFC rectifier for rr aircon and industrial power supplies. T max. 175 C J Package TO-220 FullPAK 2L MECHANICAL DATA Circuit configuration Single Case: TO-220 FullPAK 2L Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current in DC I T = 106 C, DC 15 F(AV) C A Non-repetitive peak surge current I T = 25 C, t = 10 ms, sine wave 205 FSM C p Operating junction and storage temperature T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 15 A - 1.6 2.1 F Forward voltage V F I = 15 A, T = 125 C - 1.3 - F J V = V rated - - 10 R R Reverse leakage current I A R T = 125 C, V = V rated - - 500 J R R Junction capacitance C V = 600 V - 19 - pF T R Series inductance L Measured to lead 5 mm from package body - 8 - nH S Revision: 07-Jun-2022 Document Number: 96969 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DVS-E5TX1506FP-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A,dI /dt = 100 A/s, V = 30 V - 19 - F F R Reverse recovery time t T = 25 C -23 - ns rr J T = 125 C - 36 - J I = 10 A F T = 25 C - 12 - J Peak recovery current I dI /dt = 1000 A/s A RRM F T = 125 C - 20 - J V = 400 V R T = 25 C - 180 - J Reverse recovery charge Q nC rr T = 125 C - 472 - J T = 25 C -33 - J Reverse recovery time t ns rr T = 125 C - 44 - J I = 15 A F T = 25 C - 13 - J Peak recovery current I dI /dt = 1000 A/s A RRM F T = 125 C - 21 - J V = 400 V R T = 25 C - 220 - J Reverse recovery charge Q nC rr T = 125 C - 578 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, junction-to-case R --3.3C/W thJC Weight -2.0 - g 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Maximum junction and storage temperature range T , T -55 - 175 C J Stg Case style Marking device E5TX1506FP TO-220 FullPAK 2L Revision: 07-Jun-2022 Document Number: 96969 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000