VS-EPU3006LHN3 www.vishay.com Vishay Semiconductors FRED Pt Ultrafast Rectifier, 30 A FEATURES Low forward voltage drop Base cathode Ultrafast recovery time 2 175 C operating junction temperature Designed and qualified according to 2 commercial qualification 1 AEC-Q101 qualified, meets JESD 201 class 1 3 1 whisker test 3 Cathode Anode TO-247AD 2L Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION Ultralow V , soft-switching ultrafast rectifiers optimized for F Discontinuous (Critical) Mode (DCM) Power Factor PRODUCT SUMMARY Correction (PFC). Package TO-247AD 2L The minimized conduction loss, optimized stored charge I 30 A F(AV) and low recovery current minimized the switching losses V 600 V R and reduce over dissipation in the switching element and V at I 1.15 V snubbers. F F The device is also intended for use as a freewheeling diode t typ. 30 ns rr in power supplies and other power switching applications. T max. 175 C J Diode variation Single die APPLICATIONS AC/DC SMPS 70 W to 400 W e.g. laptop and printer AC adapters, desktop PC, TV and monitor, games units, and DVD AC/DC power supplies. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current I T = 127 C 30 F(AV) C A Non-repetitive peak surge current I T = 25 C, t = 8.3 ms half sine wave 250 FSM C p Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 30 A - 1.4 2 F Forward voltage V F I = 30 A, T = 150 C - 1.15 1.35 F J V = V rated - 0.2 30 R R Reverse leakage current I A R T = 150 C, V = V rated - - 250 J R R Junction capacitance C V = 600 V - 20 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 23-Jan-17 Document Number: 95952 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-EPU3006LHN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 30 - F F R Reverse recovery time t T = 25 C -45- ns rr J T = 125 C - 100 - J I = 30 A F T = 25 C - 5.6 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 10 - J V = 200 V R T = 25 C - 127 - J Reverse recovery charge Q nC rr T = 125 C - 580 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -55 - 175 C J Stg temperature range Thermal resistance, R -0.71.1C/W thJC junction to case Thermal resistance, R Typical socket mount - - 70 thJA junction to ambient per leg Thermal resistance, Mounting surface, flat, smooth, and R -0.5 - thCS case to heat sink greased -2.0 - g Weight -0.07 - oz. 1.2 2.4 kgf cm Mounting torque - (10) (20) (lbf in) Marking device Case style: TO-247AD 2L EPU3006LH Revision: 23-Jan-17 Document Number: 95952 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000