VS-ETH3006S-M3, VS-ETH3006-1-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop 175 C operating junction temperature 2 Low leakage current 1 Designed and qualified according to JEDEC -JESD 47 1 3 Meets MSL level 1, per J-STD-020, LF maximum peak 2 2 D PAK (TO-263AB) 3 TO-262AA of 245 C Base Material categorization: for definitions of compliance cathode please see www.vishay.com/doc 99912 2 2 DESCRIPTION/APPLICATIONS Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. 1 3 1 3 N/C Anode N/C Anode The planar structure and the platinum doped life time control VS-ETH3006S-M3 VS-ETH3006-1-M3 guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC Boost stage in PRIMARY CHARACTERISTICS the AC/DC section of SMPS, inverters or as freewheeling I 30 A F(AV) diodes. V 600 V R The extremely optimized stored charge and low recovery V at I 1.4 V F F current minimize the switching losses and reduce over t (typ.) 27 ns rr dissipation in the switching element and snubbers. T max. 175 C J 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current I T = 95 C 30 F(AV) C A Non-repetitive peak surge current I T = 25 C 180 FSM C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 30 A - 2.0 2.65 F Forward voltage V F I = 30 A, T = 150 C - 1.4 1.8 F J V = V rated - 0.02 30 R R Reverse leakage current I A R T = 150 C, V = V rated - 50 300 J R R Junction capacitance C V = 600 V - 20 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 25-Oct-17 Document Number: 96332 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-ETH3006S-M3, VS-ETH3006-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 26 35 F F R Reverse recovery time t T = 25 C -26 - ns rr J T = 125 C - 70 - J I = 30 A F T = 25 C - 3.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 7.6 - J V = 200 V R T = 25 C - 50 - J Reverse recovery charge Q nC rr T = 125 C - 280 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -0.951.4C/W thJC junction-to-case Thermal resistance, R Typical socket mount - - 70 thJA junction-to-ambient Thermal resistance, R Mounting surface, flat, smooth, and greased - 0.5 - thCS case-to-heatsink -2.0 - g Weight -0.07- oz. 6 12 kgf cm Mounting torque - (5) (10) (lbf in) 2 Case style D PAK (TO-263AB) ETH3006S Marking device Case style TO-262AA ETH3006-1 1000 1000 175 C 100 150 C 125 C 10 100 T = 175 C 100 C J 1 75 C 0.1 50 C T = 150 C 10 J 0.01 25 C T = 25 C J 0.001 0.0001 1 0 100 200 300 400 500 600 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Reverse Voltage - V (V) V - Forward Voltage Drop (V) R FM Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 25-Oct-17 Document Number: 96332 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F Reverse Current - I (A) R