VS-ETX1506-M3, VS-ETX1506FP-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES Hyperfast recovery time, extremely low Q rr Low forward voltage drop 175 C operating junction temperature Low leakage current Fully isolated package (V = 2500 V ) INS RMS 2L TO-220AC 2L TO-220 FULL-PAK True 2 pin package Base Designed and qualified according to cathode JEDEC -JESD 47 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 1 3 1 2 DESCRIPTION / APPLICATIONS Cathode Anode Cathode Anode State of the art hyperfast recovery rectifiers designed with VS-ETX1506-M3 VS-ETX1506FP-M3 optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. PRODUCT SUMMARY The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and Package 2L TO-220AC, 2L TO-220FP reliability characteristics. I 15 A F(AV) These devices are intended for use in PFC boost stage in the V 600 V R AC/DC section of SMPS, inverters or as freewheeling V at I 1.55 V F F diodes. t (typ.) 18 ns rr The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over T max. 175 C J dissipation in the switching element and snubbers. Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 600 V RRM T = 141 C C Average rectified forward current in DC I 15 F(AV) FULL-PAK T = 71 C A C Non-repetitive peak surge current I T = 25 C 120 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 15 A - 2.5 3.4 F Forward voltage V F I = 15 A, T = 150 C - 1.55 2 F J V = V rated - 0.02 36 R R Reverse leakage current I A R T = 150 C, V = V rated - 40 250 J R R Junction capacitance C V = 600 V - 12 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 15-Jun-15 Document Number: 93549 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-ETX1506-M3, VS-ETX1506FP-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 17 23 F F R I = 15 A, dI /dt = 100 A/s, V = 30 V - 18 30 F F R Reverse recovery time t ns rr T = 25 C -20- J T = 125 C - 45 - J I = 15 A F T = 25 C - 2.7 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 5.5 - J V = 390 V R T = 25 C - 26 - J Reverse recovery charge Q nC rr T = 125 C - 130 - J Reverse recovery time t -32- ns rr I = 15 A F Peak recovery current I T = 125 C dI /dt = 800 A/s -17- A RRM J F V = 390 V R Reverse recovery charge Q - 290 - nC rr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range -1.2 1.4 Thermal resistance, R thJC junction to case FULL-PAK - 3.7 4.3 Thermal resistance, C/W R Typical socket mount - - 70 thJA junction to ambient Typical thermal resistance, R Mounting surface, flat, smooth and greased - 0.5 - thCS case to heatsink -2 - g Weight -0.07 - oz. 6 12 kgf cm Mounting torque - (5) (10) (lbf in) Case style 2L TO-220AC ETX1506 Marking device Case style 2L TO-220 FULL-PAK ETX1506FP Revision: 15-Jun-15 Document Number: 93549 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000