Product Information

VSKT41/14

VSKT41/14 electronic component of Vishay

Datasheet
Thyristor SCR Module 1.4KV 985A 7-Pin ADD-A-PAK

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 53.6499 ea
Line Total: USD 107.3

0 - Global Stock
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 10
Multiples : 1

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VSKT41/14
Vishay

10 : USD 0

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2
Multiples : 1

Stock Image

VSKT41/14
Vishay

2 : USD 53.6499

     
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
Operating Temp Range
Package Type
Peak Surge On-State Current Max
Peak Reverse Gate Voltage
Peak Repeat Off Current
Repetitive Peak Off-State Volt
Average On-State Current
Pin Count
Type
Operating Temperature Classification
On State Voltagemax
Hold Current
Rad Hardened
Gate Trigger Current
Gate Trigger Voltage
Deleted
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VSK.41.., VSK.56.. Series www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A FEATURES High voltage Industrial standard package Low thermal resistance UL approved file E78996 Designed and qualified for industrial level Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 ADD-A-PAK BENEFITS Excellent thermal performances obtained by the usage of PRODUCT SUMMARY exposed direct bonded copper substrate I or I 45 A/60 A T(AV) F(AV) Up to 1600 V Type Modules - Thyristor, Standard High surge capability Easy mounting on heatsink MECHANICAL DESCRIPTION The ADD-A-PAK generation VII, new generation of ELECTRICAL DESCRIPTION ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct These modules are intended for general purpose high bonded copper substrate, with advanced compact simple voltage applications such as high voltage regulated power package solution and simplified internal structure with supplies, lighting circuits, temperature and motor speed minimized number of interfaces. control circuits, UPS, and battery charger. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VSK.41 VSK.56 UNITS I or I 85 C 45 60 T(AV) F(AV) I As AC switch 100 135 O(RMS) A 50 Hz 850 1200 I TSM, I FSM 60 Hz 890 1256 50 Hz 3.61 7.20 2 2 I t kA s 60 Hz 3.30 6.57 2 2 I t 36.1 72 kA s V Range 400 to 1600 V RRM T -40 to 125 Stg C T -40 to 125 J Revision: 14-Jan-14 Document Number: 94630 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VSK.41.., VSK.56.. Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM V , MAXIMUM REPETITIVE RRM RSM DRM I I RRM, DRM VOLTAGE REPETITIVE PEAK NON-REPETITIVE PEAK PEAK OFF-STATE VOLTAGE, TYPE NUMBER AT 125 C CODE REVERSE VOLTAGE REVERSE VOLTAGE GATE OPEN CIRCUIT mA V V V 04 400 500 400 06 600 700 600 08 800 900 800 VSK.41 10 1000 1100 1000 15 VSK.56 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VSK.41 VSK.56 UNITS Maximum average on-state current (thyristors) I T(AV) 180 conduction, half sine wave, 45 60 T = 85 C Maximum average forward current (diodes) I C F(AV) Maximum continuous RMS on-state current, or I I I 100 135 O(RMS) (RMS) (RMS) as AC switch A t = 10 ms 850 1200 No voltage Sinusoidal I TSM reapplied t = 8.3 ms 890 1256 Maximum peak, one-cycle non-repetitive half wave, or on-state or forward current initial T = t = 10 ms J 715 1000 100 % V RRM I FSM T maximum J reapplied t = 8.3 ms 750 1056 t = 10 ms 3.61 7.20 No voltage reapplied t = 8.3 ms 3.30 6.57 Initial T = J 2 2 2 Maximum I t for fusing I t kA s T maximum t = 10 ms J 2.56 5.10 100 % V RRM reapplied t = 8.3 ms 2.33 4.56 t = 0.1 ms to 10 ms, no voltage reapplied 2 2 (1) 2 Maximum I t for fusing I t 36.1 72 kA s T = T maximum J J (3) Low level 1.08 0.91 (2) Maximum value or threshold voltage V T = T maximum V T(TO) J J (4) High level 1.12 1.02 (3) Low level 4.7 4.27 Maximum value of on-state (2) r T = T maximum m t J J (4) slope resistance High level 4.5 3.77 V I = x I TM TM T(AV) Maximum peak on-state or forward voltage T = 25 C 1.81 1.7 V J V I = x I FM FM F(AV) Maximum non-repetitive rate of rise of T = 25 C, from 0.67 V , J DRM dI/dt 150 A/s turned on current I = x I , I = 500 mA, t < 0.5 s, t > 6 s TM T(AV) g r p T = 25 C, anode supply = 6 V, J Maximum holding current I 200 H resistive load, gate open circuit mA Maximum latching current I T = 25 C, anode supply = 6 V, resistive load 400 400 L J Notes (1) 2 2 I t for time t = I t x t x x (2) 2 Average power = V x I + r x (I ) T(TO) T(AV) t T(RMS) (3) 16.7 % x x I < I < x I AV AV (4) I > x I AV Revision: 14-Jan-14 Document Number: 94630 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
BC
BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
General Semi
GENERAL SEMI.
GENERAL SEMICONDUCTOR (VISHAY)
GS
HUNTINGTON ELECTRIC
Micro-Measurements (Division of Vishay Precision Group)
ROEDERSTEIN
ROEDERSTEIN / VISHAY
SFERNICE (VISHAY)
SFR
SILICONIX
SILICONIX (VISHAY)
SIX
SPD
SPECTROL
SPECTROL ELECTRONICS
SPP
SPRAGUE (VISHAY)
TECHNO
VIR
Vishay BC Components
Vishay Beyschlag
Vishay Cera-Mite
Vishay Dale
Vishay Draloric
Vishay Electro-Films
Vishay Huntington
Vishay Mills
Vishay Milwaukee
Vishay Polytech
Vishay Roederstein
Vishay Sfernice
Vishay Siliconix
Vishay Spectrol
Vishay Sprague
Vishay Tansitor
Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
Vishay / Techno
Vishay / Thin Film
Vishay / Vitramon
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Vishay Beyschlag
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VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
VISHAY SEMICONDUCTOR
Vishay Semiconductor Diodes Division
Vishay Semiconductor Opto Division
Vishay Semiconductors
Vishay Sfernice
Vishay Siliconix
VISHAY SMALL SIGNAL
VISHAY SPECIALTY CAPACITORS
Vishay Spectrol
Vishay Sprague
VISHAY TANSITOR
VISHAY TECHNO
Vishay Thin Film
Vishay Vitramon
VISHAY/BC COMPONENTS
Vishay/Beyschlag
Vishay/Dale
Vishay/General Semic
VISHAY/SILICONIX
VishayBC Components
VishayBeyschlag
VishayElectro-Films
VishayGeneral Semiconductor
VishaySemiconductors
VishaySprague
VishayVitramon
VIT
VITRAMON (VISHAY)
VITRAMON/VISHAY
VITROMON
VSC
VSO
VSS

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