VSMB2943SLX01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW FEATURES Package type: surface mount Package form: side view Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3 AEC-Q101 qualified Peak wavelength: = 940 nm p High reliability High radiant power DESCRIPTION High radiant intensity VSMB2943SLX01 is an infrared, 940 nm, side looking emitting diode in GaAlAs multi quantum well (MQW) Angle of half intensity: = 25 technology with high radiant power and high speed, molded Low forward voltage in clear, untinted plastic package (with lens) for surface Suitable for high pulse current operation mounting (SMD). Package matches with detector VEMD2023SLX01 and VEMT2023SLX01 APPLICATIONS Floor life: 4 weeks, MSL 2a, acc. J-STD-020 IrDA compatible data transmission Material categorization: For definitions of compliance Miniature light barrier please see www.vishay.com/doc 99912 Photointerrupters Optical switch Remote control IR touch panels PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSMB2943SLX01 20 25 940 15 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMB2943SLX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Side view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 160 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature according figure 9, J-STD-020 T 260 C sd Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R 250 K/W thJA Rev. 1.1, 02-Dec-13 Document Number: 83479 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMB2943SLX01 www.vishay.com Vishay Semiconductors 120 180 160 100 140 80 120 100 60 80 R = 250 K/W R = 250 K/W thJA thJA 40 60 40 20 20 0 0 0 10 203040 50607080 90 100 0 1020 3040506070 8090100 21344 T - Ambient Temperature (C) T - Ambient Temperature (C) 21343 amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.15 1.35 1.6 V F p F Forward voltage I = 1 A, t = 100 s V 2.2 V F p F I = 1 mA TK -1.8 mV/K F VF Temperature coefficient of V F I = 100 mA TK -1.1 mV/K F VF Reverse current I Not designed for reverse operation A R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C 70 pF R J I = 100 mA, t = 20 ms I 10 20 30 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 170 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 40 mW F p e I = 1 mA TK -1.1 %/K F e Temperature coefficient of radiant power I = 100 mA TK -0.51 %/K F e Angle of half intensity 25 deg Peak wavelength I = 30 mA 920 940 960 nm F p Spectral bandwidth I = 30 mA 25 nm F Temperature coefficient of I = 30 mA TK 0.25 nm/K p F p Rise time I = 100 mA, 20 % to 80 % t 15 ns F r Fall time I = 100 mA, 20 % to 80 % t 15 ns F f Cut-off frequency I = 70 mA, I = 30 mA pp f 23 MHz DC AC c Rev. 1.1, 02-Dec-13 Document Number: 83479 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F