X-On Electronics has gained recognition as a prominent supplier of VSMG2020X01 infrared emitters - high power across the USA, India, Europe, Australia, and various other global locations. VSMG2020X01 infrared emitters - high power are a product manufactured by Vishay. We provide cost-effective solutions for infrared emitters - high power, ensuring timely deliveries around the world.

VSMG2020X01 Vishay

VSMG2020X01 electronic component of Vishay
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Part No.VSMG2020X01
Manufacturer: Vishay
Category:Infrared Emitters - High Power
Description: Infrared Emitters - High Power 850nm 40mW/Sr 20ns Gullwing
Datasheet: VSMG2020X01 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 1.5814
10 : USD 0.7596
100 : USD 0.4295
500 : USD 0.3483
1000 : USD 0.2874
2500 : USD 0.2671
6000 : USD 0.2618
12000 : USD 0.2511
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Wavelength
Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
Power Rating
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
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We are delighted to provide the VSMG2020X01 from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VSMG2020X01 and other electronic components in the Infrared Emitters - High Power category and beyond.

VSMG2000X01, VSMG2020X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH FEATURES Package type: surface mount VSMG2000X01 VSMG2020X01 Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 AEC-Q101 qualified Peak wavelength: = 850 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 12 21725-2 Low forward voltage Suitable for high pulse current operation Terminal configurations: gullwing or reserve gullwing DESCRIPTION Package matches with detector VEMD2000X01 series VSMG2000X01 series are infrared, 850 nm emitting diodes Floor life: 4 weeks, MSL 2a, acc. J-STD-020 in GaAlAs (DH) technology with high radiant power and high Material categorization: For definitions of compliance speed, molded in clear, untinted plastic packages (with lens) please see www.vishay.com/doc 99912 for surface mounting (SMD). APPLICATIONS IrDA compatible data transmission IR-illumination (CCTV) Miniature light barrier Photointerrupters Optical switch Shaft encoders IR emitter source for proximity applications PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSMG2000X01 40 12 850 20 VSMG2020X01 40 12 850 20 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMG2000X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMG2020X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity Rev. 1.2, 23-Jan-13 Document Number: 85194 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMG2000X01, VSMG2020X01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 170 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. figure 9, J-STD-020 T 260 C sd J-STD-051, leads 7 mm, Thermal resistance junction/ambient R 250 K/W thJA soldered on PCB 120 180 160 100 140 120 80 100 60 80 R = 250 K/W thJA R = 250 K/W thJA 40 60 40 20 20 0 0 0 1020 3040506070 8090100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 21341 21342 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.25 1.45 1.7 V F p F Forward voltage I = 1 A, t = 100 s V 2.3 V F p F I = 1 mA TK - 1.8 mV/K F VF Temperature coefficient of V F I = 100 mA TK - 1.1 mV/K F VF Reverse current V = 5 V I 10 A R R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C 125 pF R J I = 100 mA, t = 20 ms I 20 40 60 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 350 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 40 mW F p e Temperature coefficient of I = 100 mA TK - 0.35 %/K e F e Angle of half intensity 12 deg Peak wavelength I = 30 mA 830 850 870 nm F p Spectral bandwidth I = 30 mA 35 nm F Temperature coefficient of I = 30 mA TK 0.25 nm/K p F p Rise time I = 100 mA, 20 % to 80 % t 20 ns F r Fall time I = 100 mA, 20 % to 80 % t 20 ns F f Cut-off frequency I = 70 mA, I = 30 mA pp f 23 MHz DC AC c Virtual source diameter d 1.5 mm Rev. 1.2, 23-Jan-13 Document Number: 85194 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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Vishay Thin Film
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Vishay / BC Components
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Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
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Vishay / Polytech
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