VS-MURB1520PbF, VS-MURB1520-1PbF www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt FEATURES Ultrafast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature 2 TO-263AB (D PAK) TO-262AA Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Base cathode AEC-Q101 qualified 2 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 1 3 1 3 DESCRIPTION / APPLICATIONS N/C Anode N/C Anode MUR.. series are the state of the art ultrafast recovery VS-MURB1520-1PbF VS-MURB1520PbF rectifiers specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, PRODUCT SUMMARY ruggedness and reliability characteristics. I 15 A F(AV) These devices are intended for use in the output rectification V 200 V R stage of SMPS, UPS, DC/DC converters as well as V at I 0.85 V freewheeling diode in low voltage inverters and chopper F F motor drives. t 35 ns rr Their extremely optimized stored charge and low recovery T max. 175 C J current minimize the switching losses and reduce over 2 Package TO-263AB (D PAK), TO-262AA dissipation in the switching element and snubbers. Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Peak repetitive reverse voltage V 200 V RRM Average rectified forward current I Total device, rated V , T = 150 C 15 F(AV) R C Non-repetitive peak surge current I 200 A FSM Peak repetitive forward current I Rated V , square wave, 20 kHz, T = 150 C 30 FM R C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R V I = 15 A - - 1.05 F Forward voltage V F I = 15 A, T = 150 C - - 0.85 F J V = V rated - - 10 R R Reverse leakage current I A R T = 150 C, V = V rated - - 500 J R R Junction capacitance C V = 200 V - 55 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 10-Jul-15 Document Number: 94082 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-MURB1520PbF, VS-MURB1520-1PbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - - 35 F F R Reverse recovery time t T = 25 C -22 - ns rr J T = 125 C - 39 - J I = 15 A F T = 25 C - 1.6 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4.1 - J V = 160 V R T = 25 C - 19 - J Reverse recovery charge Q nC rr T = 125 C - 90 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -65 - 175 C J Stg storage temperature range Thermal resistance, R --1.5 thJC junction to case Thermal resistance, R -- 50 C/W thJA junction to ambient Thermal resistance, Mounting surface, flat, smooth and R -0.5 - thCS case to heatsink greased -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Case style TO-263AB (D PAK) MURB1520 Marking device Case style TO-262 MURB1520-1 100 1000 T = 175 C J 100 T = 150 C J 10 T = 125 C J 10 T = 100 C J T = 175 C J 1 T = 150 C J 1 T = 25 C J 0.1 T = 25 C J 0.1 0.01 0 0.3 0.6 0.9 1.2 1.5 0 50 100 150 200 250 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 10-Jul-15 Document Number: 94082 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R