VSMY385010 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES Package type: surface mount Package form: PLCC-2 Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 Peak wavelength: = 850 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 60 948553 Floor life: 168 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION TM RELEASED FOR APPLICATIONS As part of the SurfLight portfolio, the VSMY385010 is an infrared, 850 nm emitting diode based on surface emitter Infrared radiation source for operation with CMOS cameras technology with high radiant intensity, high optical power (illumination) and high speed, molded in a PLCC-2 package for surface High speed IR data transmission mounting (SMD). IR touch panels 3D gaming Light curtain PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSMY385010 9 60 850 10 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY385010-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2 VSMY385010-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 70 mA F Pulse peak forward current t /T = 0.5, t 100 s I 140 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 140 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +85 C stg Soldering temperature acc. figure 7, J-STD-020 T 260 C sd Thermal resistance junction/ambient J-STD-051, soldered on PCB R 250 K/W thJA Rev. 1.0, 27-May-15 Document Number: 84294 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMY385010 www.vishay.com Vishay Semiconductors 80 140 70 120 60 100 50 80 40 60 30 R = 250 K/W thJA R = 250 K/W thJA 40 20 20 10 0 0 0 20406080 100 0 20406080 100 T - Ambient Temperature (C) amb T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 70 mA, t = 20 ms V 1.6 2.0 V F p F Forward voltage I = 1 A, t = 100 s V 2.9 V F p F Temperature coefficient of V I = 70 mA TK -1.5 mV/K F F VF Reverse current I not designed for reverse operation A R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 125 pF R j I = 70 mA, t = 20 ms I 5.5 9 16 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 130 mW/sr F p e Radiant power I = 70 mA, t = 20 ms 40 mW F p e Temperature coefficient of I = 70 mA TK -0.25 %/K e F e Angle of half intensity 60 deg Peak wavelength I = 50 mA 840 850 870 nm F p Spectral bandwidth I = 50 mA 35 nm F Temperature coefficient of I = 70 mA TK 0.26 nm/K p F p Rise time I = 70 mA t 10 ns F r Fall time I = 70 mA t 10 ns F f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 115 t = 20 ms p I = 70 mA F 110 t = 20 ms p 105 100 100 95 10 90 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 V - Forward Voltage (V) T - Ambient Temperature (C) F amb Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Rev. 1.0, 27-May-15 Document Number: 84294 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) I - Forward Current (mA) V F V - Relative Forward Voltage (%) I - Forward Current (mA) F, rel F