VS-SD3000C..K Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Hockey PUK Version), 3800 A FEATURES Wide current range High voltage ratings up to 1000 V High surge current capabilities Diffused junction Hockey PUK version Case style K-PUK (DO-200AC) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 K-PUK (DO-200AC) TYPICAL APPLICATIONS Converters Power supplies PRIMARY CHARACTERISTICS High power drives I 3800 A F(AV) Package K-PUK (DO-200AC) Auxiliary system supplies for traction applications Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 3800 A I F(AV) T 55 C hs 6230 A I F(RMS) T 25 C hs 50 Hz 35 800 I A FSM 60 Hz 37 500 50 Hz 6410 2 2 I t kA s 60 Hz 5850 V Range 400 to 1000 V RRM T -40 to +180 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE PEAK V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM VOLTAGE TYPE NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = 180 C J CODE V V mA 04 400 500 VS-SD3000C..K 08 800 900 75 10 1000 1100 Revision: 11-Jan-18 Document Number: 93543 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-SD3000C..K Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 3800 (1925) A Maximum average forward current 180 conduction, half sine wave I F(AV) at heatsink temperature Double side (single side) cooled 55 (85) C Maximum RMS forward current I 25 C heatsink temperature double side cooled 6230 F(RMS) t = 10 ms 35 800 No voltage reapplied t = 8.3 ms 37 500 A Maximum peak, one-cycle forward, I FSM non-repetitive surge current t = 10 ms 30 100 100 % V RRM reapplied t = 8.3 ms 31 500 Sinusoidal half wave, initial T = T maximum J J t = 10 ms 6410 No voltage reapplied t = 8.3 ms 5850 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 4530 100 % V RRM reapplied t = 8.3 ms 4135 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 64 100 kA s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.74 F(TO)1 F(AV) F(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 0.86 F(TO)2 F(AV) J J Low level value of forward r (16.7 % x x I < I < x I ), T = T maximum 0.08 f1 F(AV) F(AV) J J slope resistance mW High level value of forward r (I > x I ), T = T maximum 0.07 f2 F(AV) J J slope resistance I = 6000 A, T = T maximum pk J J Maximum forward voltage drop V 1.22 V FM t = 10 ms sinusoidal wave p THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction operating T -40 to +180 J temperature range C Maximum storage temperature range T -55 to +200 Stg DC operation single side cooled 0.042 Maximum thermal resistance, R K/W thJ-hs junction to heatsink DC operation double side cooled 0.020 Mounting force, 10 % 22 250 (2250) N (kg) Approximate weight 425 g Case style See dimensions - link at the end of datasheet K-PUK (DO-200AC) R CONDUCTION thJ-hs SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION CONDUCTION ANGLE TEST CONDITIONS UNITS SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.002 0.002 0.001 0.001 120 0.002 0.002 0.002 0.002 90 0.003 0.003 0.003 0.003 T = T maximum K/W J J 60 0.004 0.004 0.004 0.004 30 0.007 0.007 0.007 0.007 Note The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJ-hs Revision: 11-Jan-18 Document Number: 93543 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000