VS-ST333C..C Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Hockey PUK Version), 720 A
FEATURES
Metal case with ceramic insulator
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
International standard case E-PUK (TO-200AB)
E-PUK (TO-200AB)
High surge current capability
Low thermal impedance
High speed performance
PRIMARY CHARACTERISTICS
Material categorization: for definitions of compliance
Package E-PUK (TO-200AB)
please see www.vishay.com/doc?99912
Circuit configuration Single SCR
I 720 A
T(AV)
TYPICAL APPLICATIONS
V /V 400 V, 800 V
DRM RRM
Inverters
V 1.96 V
TM
Choppers
I at 50 Hz 11 000 A
TSM
Induction heating
I at 60 Hz 11 500 A
TSM
All types of force-commutated converters
I 200 mA
GT
T /T 55 C
C hs
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
720 A
I
T(AV)
T 55 C
hs
1435 A
I
T(RMS)
T 25 C
hs
50 Hz 11 000
I A
TSM
60 Hz 11 500
50 Hz 605
2 2
I t kA s
60 Hz 553
V /V 400 to 800 V
DRM RRM
t Range 10 to 30 s
q
T -40 to +125 C
J
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V /V , MAXIMUM V , MAXIMUM I /I MAXIMUM AT
DRM RRM RSM DRM RRM
VOLTAGE
TYPE NUMBER REPETITIVE PEAK VOLTAGE NON-REPETITIVE PEAK VOLTAGE T = T MAXIMUM
J J
CODE
V V mA
04 400 500
VS-ST333C..C 50
08 800 900
Revision: 13-Sep-17 Document Number: 93678
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-ST333C..C Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
I
TM I I
TM TM
FREQUENCY UNITS
180 el 180 el 100 s
50 Hz 1630 1420 2520 2260 7610 6820
400 Hz 1630 1390 2670 2330 4080 3600
A
1000 Hz 1350 1090 2440 2120 2420 2100
2500 Hz 720 550 1450 1220 1230 1027
Recovery voltage V 50 50 50
r
V
Voltage before turn-on V V V V
d DRM DRM DRM
Rise of on-state current dI/dt 50 - - A/s
Heatsink temperature 40 55 40 55 40 55 C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 /F
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
720 (350) A
Maximum average on-state current 180 conduction, half sine wave
I
T(AV)
at heatsink temperature Double side (single side) cooled
55 (75) C
Maximum RMS on-state current I DC at 25 C heatsink temperature double side cooled 1435
T(RMS)
t = 10 ms 11 000
No voltage
reapplied
t = 8.3 ms 11 500 A
Maximum peak, one half cycle,
I
TSM
non-repetitive surge current
t = 10 ms 9250
100 % V
RRM
reapplied
t = 8.3 ms 9700
Sinusoidal half wave,
initial T = T maximum
J J
t = 10 ms 605
No voltage
reapplied
t = 8.3 ms 553
2 2 2
Maximum I t for fusing I t kA s
t = 10 ms 428
100 % V
RRM
reapplied
t = 8.3 ms 391
2 2 2
Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 6050 kA s
Maximum peak on-state voltage V I = 1810 A, T = T maximum, t = 10 ms sine wave pulse 1.96
TM TM J J p
Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.91 V
T(TO)1 T(AV) T(AV) J J
High level value of threshold voltage V (I > x I ), T = T maximum 0.93
T(TO)2 T(AV) J J
Low level value of forward slope resistance r (16.7 % x x I < I < x I ), T = T maximum 0.58
t1 T(AV) T(AV) J J
m
High level value of forward slope resistance r (I > x I ), T = T maximum 0.58
t2 T(AV) J J
Maximum holding current I T = 25 C, I > 30 A 600
H J T
mA
Typical latching current I T = 25 C, V = 12 V, R = 6 , I = 1 A 1000
L J A a G
SWITCHING
VALUES
PARAMETER SYMBOL TEST CONDITIONS UNITS
MIN. MAX.
Maximum non-repetitive rate of rise
dI/dt T = T maximum, V = Rated V ; I = 2 x dI/dt 1000 A/s
J J DRM DRM TM
of turned on current
T = 25 C, V = Rated V , I = 50 A DC, t = 1 s
J DM DRM TM p
Typical delay time t 1.1
d
Resistive load, gate pulse: 10 V, 5 source
s
T = T maximum,
J J
Maximum turn-off time t I = 550 A, commutating dI/dt = 40 A/s 10 30
q TM
V = 50 V, t = 500 s, dV/dt: See table in device code
R p
Revision: 13-Sep-17 Document Number: 93678
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000