Product Information

VS-VSKN105/06

VS-VSKN105/06 electronic component of Vishay

Datasheet
SCR Modules Input Modules - AAP DBC

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 49.7023 ea
Line Total: USD 49.7

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1
1 : USD 49.2732
10 : USD 44.8832

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Package / Case
Minimum Operating Temperature
Mounting Style
Breakover Current Ibo Max
Current Rating
Off-State Leakage Current Vdrm Idrm
Brand
Circuit Type
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Taric
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VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series www.vishay.com Vishay Semiconductors AAP Gen 7 (TO-240AA) Power Modules Thyristor/Diode and Thyristor/Thyristor, 105 A FEATURES High voltage Industrial standard package Low thermal resistance UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 ADD-A-PAK BENEFITS Excellent thermal performances obtained by the usage of PRIMARY CHARACTERISTICS exposed direct bonded copper substrate I or I 105 A T(AV) F(AV) Up to 1600 V Type Modules - thyristor, standard High surge capability Package AAP Gen 7 (TO-240AA) Easy mounting on heatsink MECHANICAL DESCRIPTION ELECTRICAL DESCRIPTION The AAP Gen 7 (TO-240AA), new generation of APP module, These modules are intended for general purpose high combines the excellent thermal performances obtained by voltage applications such as high voltage regulated power the usage of exposed direct bonded copper substrate, with supplies, lighting circuits, temperature and motor speed advanced compact simple package solution and simplified control circuits, UPS and battery charger. internal structure with minimized number of interfaces. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I or I 85 C 105 T(AV) F(AV) I As AC switch 235 O(RMS) A 50 Hz 2000 I TSM, I FSM 60 Hz 2094 50 Hz 20 2 2 I t kA s 60 Hz 18.26 2 2 I t 200 kA s V /V Range 400 to 1600 V DRM RRM T -40 to +130 Stg C T -40 to +130 J Revision: 26-Jul-2018 Document Number: 94628 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM V , MAXIMUM REPETITIVE RRM RSM DRM I I RRM, DRM VOLTAGE REPETITIVE PEAK NON-REPETITIVE PEAK PEAK OFF-STATE VOLTAGE, TYPE NUMBER AT 130 C REVERSE VOLTAGE REVERSE VOLTAGE GATE OPEN CIRCUIT CODE mA V V V 04 400 500 400 06 600 700 600 08 800 900 800 VS-VSK.105 10 1000 1100 1000 20 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current (thyristors) I T(AV) 180 conduction, half sine wave, 105 T = 85 C C Maximum average forward current (diodes) I F(AV) Maximum continuous RMS on-state current, or I 235 O(RMS) I I as AC switch (RMS) (RMS) A t = 10 ms 2000 No voltage I Sinusoidal TSM reapplied t = 8.3 ms 2094 Maximum peak, one-cycle non-repetitive or half wave, on-state or forward current t = 10 ms 1682 100 % V RRM I initial T = T maximum FSM J J reapplied t = 8.3 ms 1760 t = 10 ms 20 No voltage reapplied t = 8.3 ms 18.26 2 2 2 Maximum I t for fusing I t Initial T = T maximum kA s J J t = 10 ms 14.14 100 % V RRM reapplied t = 8.3 ms 12.91 t = 0.1 ms to 10 ms, no voltage reapplied 2 2 (1) 2 Maximum I t for fusing I t 200 kA s T = T maximum J J (3) Low level 0.98 (2) Maximum value or threshold voltage V T = T maximum V T(TO) J J (4) High level 1.12 (3) Low level 2.7 Maximum value of on-state (2) r T = T maximum m t J J (4) slope resistance High level 2.34 V I = x I TM TM T(AV) T = 25 C 1.8 V Maximum peak on-state or forward voltage J V I = x I FM FM F(AV) Maximum non-repetitive rate of rise of T = 25 C, from 0.67 V , J DRM dI/dt 150 A/s turned on current I = x I , I = 500 mA, t < 0.5 s, t > 6 s TM T(AV) g r p T = 25 C, anode supply = 6 V, J Maximum holding current I 250 H resistive load, gate open circuit mA Maximum latching current I T = 25 C, anode supply = 6 V, resistive load 400 L J Notes (1) 2 2 I t for time t = I t x t x x (2) 2 Average power = V x I + r x (I ) T(TO) T(AV) t T(RMS) (3) 16.7 % x x I < I < x I AV AV (4) I > x I AV Revision: 26-Jul-2018 Document Number: 94628 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
BC
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