The XT9S20ANA20M is a N-Channel enhancement mode MOSFET produced by Vishay. It has a maximum drain source voltage of 20V, and a drain current of 20A. It has a maximum power dissipation of 45W. This MOSFET has an Avalanche energy rating of 7.4mJ and a temperature range of -55°C to 175°C. The RDS(on) of this device is 0.261? and a gate charge Qg of 8.9nC.