WM02N08F Wayon

WM02N08F electronic component of Wayon
WM02N08F Wayon
WM02N08F MOSFETs
WM02N08F  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of WM02N08F MOSFETs across the USA, India, Europe, Australia, and various other global locations. WM02N08F MOSFETs are a product manufactured by Wayon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. WM02N08F
Manufacturer: Wayon
Category: MOSFETs
Description: DFN1006-3L MOSFETs ROHS
Datasheet: WM02N08F Datasheet (PDF)
Price (USD)
20: USD 0.0536 ea
Line Total: USD 1.07 
Availability : 9603
  
Ship by Wed. 22 Oct to Tue. 28 Oct
QtyUnit Price
20$ 0.0536
200$ 0.0414
600$ 0.026
2000$ 0.0207
10000$ 0.0176
20000$ 0.0163

Availability 9603
Ship by Wed. 22 Oct to Tue. 28 Oct
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.0536
200$ 0.0414
600$ 0.026
2000$ 0.0207
10000$ 0.0176
20000$ 0.0163

   
Manufacturer
Product Category
Category
Rohs
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the WM02N08F from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the WM02N08F and other electronic components in the MOSFETs category and beyond.

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The WM02N08F with DFN1006-3L MOSFETs ROHS is a MOSFET transistor manufactured by Wayon. It is a type of P-channel transistor that is designed for high-efficiency, low-power applications. It has a maximum gate-source voltage of -20V, a drain-source current isolation of 8A, and a drain-source resistance (RDS) of 5.1mO. It is lead-free and RoHS-compliant, has an operating temperature range of -55°C ~ 150°C, and is housed in a 3x3 mm dual-flat no-lead (DFN) package. The device is suitable for high-side switching applications and can be used to drive FETs, transistors, and other power components.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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