Product Information

ACTT2S-800E,118

ACTT2S-800E,118 electronic component of WeEn Semiconductor

Datasheet
Triacs AC THYRISTOR TRIAC PWR SWITCH

Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

33: USD 0.2509 ea
Line Total: USD 8.28

5286 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 33  Multiples: 1
Pack Size: 1
Availability Price Quantity
5286 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

ACTT2S-800E,118
WeEn Semiconductor

1 : USD 0.2563
10 : USD 0.2538
25 : USD 0.2509
100 : USD 0.2479
250 : USD 0.245
500 : USD 0.2401
1000 : USD 0.2401
3000 : USD 0.2401

1 - WHS 2


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

ACTT2S-800E,118
WeEn Semiconductor

1 : USD 1.1764
10 : USD 0.9951
30 : USD 0.9025
100 : USD 0.8138
500 : USD 0.7595
1000 : USD 0.7313

79 - WHS 3


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

ACTT2S-800E,118
WeEn Semiconductor

1 : USD 0.5107
10 : USD 0.4504
100 : USD 0.3525
500 : USD 0.3139
1000 : USD 0.2705
2500 : USD 0.256
5000 : USD 0.2524
25000 : USD 0.2451

5286 - WHS 4


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 33
Multiples : 1

Stock Image

ACTT2S-800E,118
WeEn Semiconductor

33 : USD 0.2509
100 : USD 0.2479
250 : USD 0.245
500 : USD 0.2401

     
Manufacturer
Product Category
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Package / Case
Mounting Style
Packaging
Hts Code
LoadingGif

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ACTT2S-800E AC Thyristor Triac power switch 11 June 2018 Product data sheet 1. General description AC Thyristor Triac power switch in a SOT428 (DPAK) surface mountable plastic package with self- protective clamping capabilities against low and high energy transients. 2. Features and benefits Clamping structure ensuring safe high over-voltage withstand capability Direct interfacing with low power drivers and microcontrollers Full cycle AC conduction Over-voltage withstand capability to IEC 61000-4-5 Pin compatible with standard triacs Planar passivated for voltage ruggedness and reliability Protective self turn-on capability for high energy transients Safe clamping capability for low energy over-voltage transients Sensitive gate for easy logic level triggering Surface mountable package Triggering in three quadrants only Very high immunity to false turn-on by dV/dt 3. Applications AC fan, pump and compressor controls Highly inductive, resistive and safety loads Large and small appliances (White Goods) Reversing induction motor controls 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I RMS on-state current full sine wave T 115 C Fig. 1 - - 2 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 15.4 A TSM j(init) state current t = 16.7 ms p full sine wave T = 25 C - - 14 A j(init) t = 20 ms Fig. 4 Fig. 5 p T junction temperature - - 125 C j V peak pulse voltage T = 25 C non-repetitive, off-state - - 2 kV PP j Fig. 6WeEn Semiconductors ACTT2S-800E AC Thyristor Triac power switch Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V I = 100 mA LD+ G+ - - 10 mA GT D T T = 25 C Fig. 8 j V = 12 V I = 100 mA LD+ G- - - 10 mA D T T = 25 C Fig. 8 j V = 12 V I = 100 mA LD- G- - - 10 mA D T T = 25 C Fig. 8 j I holding current V = 12 V T = 25 C Fig. 10 - - 25 mA H D j V on-state voltage I = 3 A T = 25 C Fig. 11 - - 2 V T T j V clamping voltage I = 0.1 mA t = 1 ms T = 25 C 850 - - V CL CL p j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 500 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit Fig. 13 dI /dt rate of change of V = 400 V T = 125 C I = 2 A 3 - - A/ms com D j T(RMS) commutating current dV /dt = 10 V/s gate open circuit com Fig. 14 Fig. 15 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 CM common LD 2 LD load G 3 G gate CM mb LD mounting base load 003aaf296 DPAK (SOT428) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version ACTT2S-800E DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) ACTT2S-800E All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 11 June 2018 2 / 13

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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