Product Information

BT158W-1200TQ

Hot BT158W-1200TQ electronic component of WeEn Semiconductor

Datasheet
SCRs BT158W-1200TQ/TO-247
Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.2434 ea
Line Total: USD 5.24

710 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
710 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

BT158W-1200TQ
WeEn Semiconductor

1 : USD 5.0821
10 : USD 4.2905
30 : USD 3.8171
90 : USD 3.3418
480 : USD 3.1221
960 : USD 3.0235

619 - WHS 2


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

BT158W-1200TQ
WeEn Semiconductor

1 : USD 5.9088
10 : USD 5.4461
25 : USD 4.7935
100 : USD 4.1765
240 : USD 4.1409
480 : USD 3.3578
1200 : USD 3.1561
5040 : USD 3.1442

96 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

BT158W-1200TQ
WeEn Semiconductor

1 : USD 5.8211
4 : USD 4.9224
10 : USD 4.6542
25 : USD 4.6408
100 : USD 4.4799

Read More Specifications

     
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State RMS Current - It RMS
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
Package / Case
Packaging
Maximum Operating Temperature
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Additional Infomation About Product

BT158W-1200T SCR 20 April 2017 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier in a SOT429N (TO247) plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance. 2. Features and benefits High thermal cycling performance Planar passivated for voltage ruggedness and reliability High voltage capacity Very high current surge capability 3. Applications Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Uninterruptible Power Supply (UPS) Solid State Relay (SSR) Traction battery charging 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 1200 V DRM state voltage V repetitive peak reverse - - 1200 V RRM voltage I non-repetitive peak on- half sine wave T = 25 C - - 1100 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p half sine wave T = 25 C - - 1210 A j(init) t = 8.3 ms p T junction temperature - - 150 C j I average on-state half sine wave T 117 C - - 80 A T(AV) mb current I RMS on-state current half sine wave T 117 C Fig. 1 - - 126 A T(RMS) mb Fig. 2 Fig. 3WeEn Semiconductors BT158W-1200T SCR Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 7 - - 70 mA GT D T j Fig. 8 Dynamic characteristics dV /dt rate of rise of off-state V = 800 V T = 125 C R = 100 1500 - - V/s D DM j GK voltage (V = 67% of V ) exponential DM DRM waveform 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode A K G 2 A anode sym037 3 G gate mb A mounting base connected to anode 1 2 3 TO-247 (SOT429N) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT158W-1200T TO-247 Plastic single-ended through-hole package heatsink mounted 1 SOT429N mounting hole 3-lead TO-247 BT158W-1200T All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 20 April 2017 2 / 13

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Ween Semiconductor may also be referenced as

WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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