BTA316-800B0,127 WeEn Semiconductor

BTA316-800B0 3Q Hi-Com Triac 12 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries B0 triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits 3Q technology for improved noise immunity High immunity to false turn-on by dV/dt High minimum I for guaranteed immunity to gate noise GT High voltage capability Least sensitive gate for highest noise immunity Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only Very high commutation capability with maximum false trigger immunity 3. Applications Electronic thermostats (heating and cooling) High power motor controls e.g. washing machines and vacuum cleaners Rectifier-fed DC inductive loads e.g. DC motors and solenoids Refrigeration and air conditioning compressors 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I RMS on-state current full sine wave T 101 C Fig. 1 - - 16 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 140 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 150 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 10 - 50 mA GT D T T = 25 C Fig. 7 jWeEn Semiconductors BTA316-800B0 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- 10 - 50 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- 10 - 50 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 60 mA H D j V on-state voltage I = 18 A T = 25 C Fig. 10 - 1.3 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 2500 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 16 A 20 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base main terminal 2 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA316-800B0 TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB BTA316-800B0 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 12 September 2018 2 / 13