BYC8-600P,127 WeEn Semiconductor

BYC8-600P Hyperfast power diode Rev.01 - 1 June 2018 Product data sheet 1. General description Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package. 2. Features and benefits Fast switching Low reverse recovery current Low leakage current Low thermal resistance Reduces switching losses in associated MOSFET 3. Applications Half-bridge/full-bridge switched-mode power supplies Continuous Current Mode (CCM) Power Factor Correction (PFC) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 600 V RRM voltage I average forward current = 0.5 T 130 C square-wave pulse 8 A F(AV) mb Fig. 1 Fig. 2 Fig. 3 I repetitive peak forward = 0.5 t = 25 s T 130 C square- 16 A FRM p mb current wave pulse I non-repetitive peak t = 10 ms T = 25 C sine-wave pulse 91 A FSM p j(init) forward current Fig. 4 t = 8.3 ms T = 25 C sine-wave pulse 100 A p j(init) Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 8 A T = 125 C Fig. 6 - 1.5 1.9 V F F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 200 A/s - 12 18 ns rr F R F T = 25 C Fig. 7 jWeEn Semiconductors BYC8-600P Hyperfast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 K cathode 2 A anode K A 001aaa020 mb mb mounting base connected to cathode 1 2 TO-220AC (SOD59) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYC8-600P TO-220AC plastic single-ended package heatsink mounted SOD59 1 mounting hole 2-lead TO-220AC 7. Marking Table 4. Marking codes Type number Marking codes BYC8-600P BYC8-600P BYC8-600P All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 1 June 2018 2 / 10