X-On Electronics has gained recognition as a prominent supplier of WNM4153-3/TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. WNM4153-3/TR MOSFETs are a product manufactured by Will Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

WNM4153-3/TR Will Semiconductor

Name: WNM4153-3/TR
Brand: Will Semiconductor
SKU: WNM41533TR_Will_Semiconductor
Availability: InStock
Rating: 5 (11 reviews)

WNM4153-3/TR electronic component of Will Semiconductor

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See Product Specifications

Part No.	WNM4153-3/TR
Manufacturer:	Will Semiconductor
Category:	MOSFETs
Description:	MOSFET N Trench 20V 800mA 1V @ 250uA 310 mÎ© @ 550mA,4.5V SOT-523 RoHS
Datasheet:	WNM4153-3/TR Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0792 ea
Line Total: USD 0.79

Availability - 562
Ship by Fri. 04 Jul to Wed. 09 Jul

MOQ: 10 Multiples: 10
Pack Size: 10

WNM4153-3/TR More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

562

Ship by Fri. 04 Jul to Wed. 09 Jul

MOQ : 10
Multiples : 10

10 : USD 0.0792
100 : USD 0.0626
300 : USD 0.0542
3000 : USD 0.0325
6000 : USD 0.0292
9000 : USD 0.0274

Specifications

Manufacturer

Will Semiconductor Will Semiconductor

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOT - 523 SOT - 523

Brand Category

Will Semiconductor Will Semiconductor

Fet Type

n trench n trench

Drain To Source Voltagevdss

20 V 20 V

Continuous Drain Current Id @ 25°C

800 mA 800 mA

Vgsth Max @ Id

1v @ 250ua 1v @ 250ua

Rds On Max @ Id Vgs

310 m @ 550ma,4.5v 310 m @ 550ma,4.5v

Power Dissipation-Max Ta

300 mW 300 mW

Drain Source Voltage Vdss

20 V 20 V

Continuous Drain Current Id

800 mA 800 mA

Power Dissipation Pd

300 mW 300 mW

Drain Source On Resistance Rdson@Vgs Id

310 mOhms @4.5V , 550mA 310 mOhms @4.5V , 550mA

Gate Threshold Voltage Vgsth@Id

1 V @250uA 1 V @250uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

WNM4153-3/TR Alternative Parts

We are delighted to provide the WNM4153-3/TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the WNM4153-3/TR and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The WNM4153-3/TR is a metal-oxide-semiconductor field-effect transistor (MOSFET) manufactured by Will Semiconductor. It is a N-Channel Trench MOSFET with 20V maximum drain-source voltage and 800mA maximum drain current. Its gate-source threshold voltage is 1V and its drain-source on-resistance is 310mO at a drain current of 550mA. The package size is 4.5V and the form factor is RoHS compliant SOT-523.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Will Semicon may also be referenced as

Will Semiconductor
WILLSEMI(Will Semicon)

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Availability	Price	Buy Price	Quantity
562 Ship by Fri. 04 Jul to Wed. 09 Jul MOQ : 10 Multiples : 10	10 : USD 0.0792 100 : USD 0.0626 300 : USD 0.0542 3000 : USD 0.0325 6000 : USD 0.0292 9000 : USD 0.0274

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