Product Information

WNM7002-3/TR

Name: WNM7002-3/TR
Brand: Will Semiconductor
SKU: WNM70023TR_WillSemiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

WNM7002-3/TR electronic component of Will Semiconductor

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Datasheet

60V 280mA 3.7mO@10V,300mA 830mW N Channel SOT-23 MOSFETs ROHS

Manufacturer: Will Semiconductor

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.0273 ea
Line Total: USD 0.55

0 - Global Stock

MOQ: 20 Multiples: 20
Pack Size: 20

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Global Stock Ships to you between Mon. 13 May to Thu. 16 May MOQ : 20 Multiples : 20 WNM7002-3/TR Will Semiconductor	20 : USD 0.0273 200 : USD 0.0238 600 : USD 0.0219 3000 : USD 0.0207 9000 : USD 0.0197 21000 : USD 0.0191

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Additional Infomation About Product

The WNM7002-3/TR is a N-Channel SOT-23 MOSFET manufactured by Will Semiconductor. This MOSFET has a maximum voltage rating of 60V, with a maximum current rating of 280mA at 3.7mO when operating at 10V. It can dissipate up to 830mW of power and is compliant with ROHS standards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Will Semiconductor may also be referenced as

Will Semicon
Will Semiconductor
WILLSEMI(Will Semicon)

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Manufacturer Will Semiconductor Will Semiconductor
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package SOT - 23 SOT - 23
Brand Category Will Semiconductor Will Semiconductor
Drain Source Voltage Vdss 60 V 60 V
Continuous Drain Current Id 280 mA 280 mA
Drain Source On Resistance Rdson@Vgs Id 3.7 mOhms @10V , 300mA 3.7 mOhms @10V , 300mA
Power Dissipation Pd 830 mW 830 mW
Gate Threshold Voltage Vgsth@Id 1.4 V @250uA 1.4 V @250uA
Reverse Transfer Capacitance Crss@Vds 0.27 pF @25V 0.27 pF @25V
Type N Channel N Channel
Input Capacitance Ciss@Vds 14.4 pF @25V 14.4 pF @25V
Total Gate Charge Qg@Vgs 260 pC @4.5V 260 pC @4.5V
Operating Temperature - 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)