Product Information

WPT2N31-6/TR

Name: WPT2N31-6/TR
Brand: Will Semiconductor
SKU: WPT2N316TR_WillSemiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

WPT2N31-6/TR electronic component of Will Semiconductor

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Datasheet

MOSFET N Channel 20V 1.7A 1V @ 250uA 260mO @ 550mA,4.5V DFN2*2-6L RoHS

Manufacturer: Will Semiconductor

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.1279 ea
Line Total: USD 0.64

0 - Global Stock

MOQ: 5 Multiples: 5
Pack Size: 5

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 28 May to Fri. 31 May MOQ : 5 Multiples : 5 WPT2N31-6/TR Will Semiconductor	5 : USD 0.1279 50 : USD 0.1059 150 : USD 0.0949 500 : USD 0.0781 3000 : USD 0.0721 6000 : USD 0.069

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Additional Infomation About Product

The WPT2N31-6/TR is an N-channel enhancement-mode MOSFET manufactured by Will Semiconductor. It has a maximum drain-source voltage of 20V, a maximum drain current of 1.7A, and a minimum gate voltage of 1V at 250mA. Its maximum drain-source on-state resistance is 260mO at 550mA, and its threshold voltage is 4.5V. It comes in a DFN2*2-6L package and is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Will Semiconductor may also be referenced as

Will Semicon
Will Semiconductor
WILLSEMI(Will Semicon)

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Manufacturer Will Semiconductor Will Semiconductor
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package DFN22 - 6L DFN22 - 6L
Brand Category Will Semiconductor Will Semiconductor
Fet Type NChannel NChannel
Drain To Source Voltagevdss 20 V 20 V
Continuous Drain Current Id @ 25°C 1.7 A 1.7 A
Vgsth Max @ Id 1V @ 250uA 1V @ 250uA
Rds On Max @ Id Vgs 260mO @ 550mA,4.5V 260mO @ 550mA,4.5V
Power Dissipation-Max Ta 25°C 1.2 W 1.2 W
Drain Source Voltage Vdss 20 V 20 V
Continuous Drain Current Id 1.7 A 1.7 A
Drain Source On Resistance Rdson@Vgs Id 260 mOhms @4.5V , 550mA 260 mOhms @4.5V , 550mA
Power Dissipation Pd 1.2 W 1.2 W
Gate Threshold Voltage Vgsth@Id 1 V @250uA 1 V @250uA
Type N Channel N Channel