Product Information

WSR200N08

WSR200N08 electronic component of Winsok

Datasheet
MOSFET N Trench 80V 200A (Tc) 4V @ 250uA 3.5 mΩ @ 100A,10V TO-220 (TO-220-3) RoHS
Manufacturer: Winsok
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.976 ea
Line Total: USD 1.98

242 - Global Stock
Ships to you between
Fri. 17 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
256 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

WSR200N08
Winsok

1 : USD 1.6338
10 : USD 1.3372
50 : USD 1.1738
100 : USD 0.9892

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The WSR200N08 is a MOSFET N Trench 80V 200A (Tc) 4V @ 250uA 3.5 mO @ 100A, 10V TO-220 (TO-220-3) RoHS manufactured by Winson. It is a power semiconductor device that has a highly efficient, wide bandgap Field Effect Transistor (FET) structure. It is ideal for applications that require high efficiency, high current handling capability, and low switching losses. It has a minimum on/off ratio of 100:1 and a maximum drain-source on-state resistance of 3.5 mO at a current of 100A. With the TO-220-3 package, mounting and soldering are straightforward. This device is RoHS certified and complies with the European Union's Directive on Restriction of the Use of Certain Hazardous Substances.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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