V 900 V
DS
I @ 25C 23 A
D
C3M0120090D
R 120 m
DS(on)
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
N-Channel Enhancement Mode
Features Package
C3M SiC MOSFET technology
High blocking voltage with low On-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Benefits
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
Applications
Renewable energy
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies
Marking
Part Number Package
Lighting
C3M0120090D TO-247-3 C3M0120090
Maximum Ratings (T = 25 C unless other wise specified)
C
Symbol Parameter Value Unit Test Conditions Note
Drain - Source Voltage 900 V V = 0 V, I = 100 A
V GS D
DSmax
Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1
V
GSmax
Gate - Source Voltage (static) -4/+15 V Static Note: 2
V
GSop
23 Fig. 19
V = 15 V, T = 25C
GS C
Continuous Drain Current A
I
D
15
V = 15 V, T = 100C
GS C
I Pulsed Drain Current 50 A Fig. 22
Pulse width t limited by T
D(pulse)
jmax
P
P Power Dissipation 97 W T =25C, T = 150 C Fig. 20
C J
D
-55 to
Operating Junction and Storage Temperature C
T , T
J stg
+150
Solder Temperature 260 C 1.6mm (0.063) from case for 10s
T
L
1 Nm
Mounting Torque M3 or 6-32 screw
M
d
8.8 lbf-in
Note (1): When using MOSFET Body Diode V = -4V/+19V
GSmax
Note (2): MOSFET can also safely operate at 0/+15 V
1 C3M0120090D Rev. A , 03-2017Electrical Characteristics (T = 25C unless other wise specified)
C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V Drain-Source Breakdown Voltage 900 V V = 0 V, I = 100 A
(BR)DSS GS D
1.8 2.1 3.5 V VDS = VGS, ID = 3 mA
V Gate Threshold Voltage Fig. 11
GS(th)
1.6 V V = V , I = 3 mA, T = 150C
DS GS D J
I Zero Gate Voltage Drain Current 1 100 A V = 900 V, V = 0 V
DSS DS GS
I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V
GSS GS DS
120 155 VGS = 15 V, ID = 15 A
Fig. 4,
R Drain-Source On-State Resistance m
DS(on)
5, 6
170 VGS = 15 V, ID = 15 A, TJ = 150C
7.7 V = 20 V, I = 15 A
DS DS
g Transconductance S Fig. 7
fs
6.7 V = 20 V, I = 15 A, T = 150C
DS DS J
Ciss Input Capacitance 350
Fig. 17,
VGS = 0 V, VDS = 600 V
C Output Capacitance 40
oss pF
18
f = 1 MHz
C Reverse Transfer Capacitance 3
rss
AC
V = 25 mV
E C Stored Energy 9 J Fig. 16
oss oss
E Turn-On Switching Energy (Body Diode FWD) 170
ON
V = 400 V, V = -4 V/15 V, I = 15 A,
DS GS Fig. 26,
D
J
29
R = 2.5, L= 142 H, T = 150C
J
G(ext)
E Turn Off Switching Energy (Body Diode FWD) 25
OFF
td(on) Turn-On Delay Time 27
V = 400 V, V = -4 V/15 V
DD GS
tr Rise Time 10
I = 15 A, R = 2.5 ,
D G(ext) Fig. 27,
ns
Timing relative to V 29
DS
t Turn-Off Delay Time 25
d(off)
Inductive load
t Fall Time 8
f
,
R Internal Gate Resistance 16 f = 1 MHz V = 25 mV
G(int) AC
Q Gate to Source Charge 4.8
gs
VDS = 400 V, VGS = -4 V/15 V
Q Gate to Drain Charge 5.0 I = 15 A
gd nC D Fig. 12
Per IEC60747-8-4 pg 21
Qg Total Gate Charge 17.3
(T = 25C unless other wise specified)
Reverse Diode Characteristics
C
Symbol Parameter Typ. Max. Unit Test Conditions Note
4.8 V V = -4 V, I = 7.5 A
GS SD
Fig. 8,
V Diode Forward Voltage
SD
9, 10
4.4 V V = -4 V, I = 7.5 A, T = 150 C
GS SD J
I Continuous Diode Forward Current 21 A V = -4 V Note 1
S
GS
I Diode pulse Current 50 A Note 1
S, pulse
V = -4 V, pulse width t limited by T
jmax
GS P
t Reverse Recover time 24 ns
rr
V = -4 V, I = 7.5 A, V = 400 V
GS SD R
Note 1
Q Reverse Recovery Charge 115 nC
rr
dif/dt = 900 A/s, T = 150 C
J
I Peak Reverse Recovery Current 6.2 A
rrm
Thermal Characteristics
Symbol Parameter Max. Unit Test Conditions Note
R Thermal Resistance from Junction to Case 1.3
JC
C/W Fig. 21
RJA Thermal Resistance From Junction to Ambient 40
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode
2 C3M0120090D Rev. A , 03-2017