C4D02120E V = 1200 V RRM Silicon Carbide Schottky Diode I (T =135C) = 5 A F C Z -Rec Rectifier Q = 11 nC c Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on V F TO-252-2 Benefits Replace Bipolar with Unipolar Rectifiers PIN 1 Essentially No Switching Losses CASE Higher Efficiency PIN 2 Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Part Number Package Marking Switch Mode Power Supplies (SMPS) C4D02120E TO-252-2 C4D02120 Boost Diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages LED Lighting Power Supplies AC/DC Converters Maximum Ratings (T =25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 1200 V RRM V Surge Peak Reverse Voltage 1300 V RSM V DC Blocking Voltage 1200 V DC 10 T =25C C I Maximum DC Current 5 A T =135C Fig. 3 F C 2 T =165C C 13 T =25C, t =10 ms, Half Sine pulse C P I Repetitive Peak Forward Surge Current A FRM 8.4 T =110C, t =10 ms, Half Sine pulse C P 19 T =25C, t =10 ms, Half Sine pulse C P I Non-Repetitive Peak Forward Surge Current A Fig. 8 FSM 16.5 T =110C, t =10 ms, Half Sine pulse C P 200 T =25C, t =10 m s, Pulse C P I Non-Repetitive Peak Forward Current A Fig. 8 F,Max 160 T =110C, t =10 m s, Pulse C P 60 T =25C C P Power Dissipation W Fig. 4 tot 26 T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-650V R 1.8 T =25C, t =10 ms 2 2 2 C P i dt i t value A s 1.4 T =110C, t =10 ms C P -55 to T , T Operating Junction and Storage Temperature C J stg +175 1 C4D02120E Rev. I, 01-2017Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.4 1.8 I = 2 A T =25C F J V Forward Voltage V Fig. 1 F 1.9 3 I = 2 A T =175C F J 10 50 V = 1200 V T =25C R J I Reverse Current A Fig. 2 R 40 150 V = 1200 V T =175C R J V = 800 V, I = 2A R F Q Total Capacitive Charge 11 nC di /dt = 200 A/ s Fig. 5 C T = 25C J 167 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 11 pF V = 400 V, T = 25C, f = 1 MHz Fig. 6 R J 8 V = 800 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 3.2 J V = 800 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R Thermal Resistance from Junction to Case 2.5 C/W Fig. 9 JC Typical Performance 600 4 T =-55C J 3.5 T = 25C J T = 75C 500 J T =125C J T =175C 3 J 400 2.5 2 300 T =-55C J T = 25C J 1.5 T = 75C J 200 T =125C J T =175C J 1 100 0.5 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 500 1000 1500 2000 V (V) R V (V) F Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D02120E Rev. I, 01-2017 I (A) F I (A) R