C4D30120D V = 1200 V RRM Silicon Carbide Schottky Diode ** I (T =135C) = 43A F C Z -Rec Rectifier ** Q = 155nC c Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Benefits TO-247-3 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Part Number Package Marking Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages C4D30120D TO-247-3 C4D30120 Free Wheeling Diodes in Inverter stages AC/DC converters Maximum Ratings (T =25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 1200 V RRM V Surge Peak Reverse Voltage 1300 V RSM V DC Peak Reverse Voltage 1200 V R 44/88 T =25C C Continuous Forward Current I 21.5/43 A T =135C Fig. 3 F C (Per Leg/Device) 15/30 T =152C C 68* T =25C, t =10 ms, Half Sine Pulse C P I Repetitive Peak Forward Surge Current A FRM 44* T =110C, t =10 ms, Half Sine Pulse C P 100* T =25C, t =10 ms, Half Sine Pulse C P I Non-Repetitive Forward Surge Current A Fig. 8 FSM 85* T =110C, t =10 ms, Half Sine Pulse C P 900* T =25C, t =10 m s, Pulse C P I Non-Repetitive Peak Forward Current A Fig. 8 F,Max 750* T =110C, t =10 m s, Pulse C P 220/440 T =25C C P Power Dissipation (Per Leg/Device) W Fig. 4 tot 95/190 T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-960V R 50* T =25C, t =10 ms 2 2 2 C P i dt i t value A s 36* T =110C, t =10 ms C P -55 to T Operating Junction Range C J +175 -55 to T Storage Temperature Range C stg +135 1 Nm M3 Screw TO-247 Mounting Torque 8.8 lbf-in 6-32 Screw * ** Per Leg, Per Device 1 C4D30120D Rev. E, 09-2016Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit Test Conditions Note 1.6 1.8 I = 15 A T =25C F J V Forward Voltage V Fig. 1 F 2.3 3 I = 15 A T =175C F J 35 200 V = 1200 V T =25C R J I Reverse Current A Fig. 2 R 120 300 V = 1200 V T =175C R J V = 800 V, I = 15A R F Q Total Capacitive Charge 77.5 nC di /dt = 200 A/s Fig. 5 C T = 25C J 1200 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 70 pF V = 400 V, T = 25C, f = 1 MHz Fig. 6 R J 50 V = 800 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 22.1 J V = 800 V Fig. 7 C R Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note 0.34** R Thermal Resistance from Junction to Case C/W Fig. 9 JC 0.68* ** ** Per Device, * Per Leg Typical Performance (Per Leg) 30 2 T =-55C 1.8 J T = 25C J 25 T = 75C J 1.6 T =125C J T =175C J 1.4 20 1.2 15 1 0.8 T =-55C J T = 25C 10 J T = 75C 0.6 J T =125C J T =175C J 0.4 5 0.2 0 0 200 400 600 800 1000 1200 1400 1600 1800 0 0.5 1 1.5 2 2.5 3 3.5 4 V (V) V (V) F R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D30120D Rev. E, 09-2016 I (A) F I (mA) R