CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Description Crees CMPA2560025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier enabling very wide bandwidths to be achieved in a small PN: CMPA2560025F footprint screw-down package featuring a Copper-Tungsten heat-sink. Package Type: 780019 Typical Performance Over 2.5 - 6.0 GHz (T = 25C) C Parameter 2.5 GHz 4.0 GHz 6.0 GHz Units Gain 27.5 14.9 23.1 dB 1 Saturated Output Power, P 35.8 177 25.6 W SAT Power Gain P 43 dBm 23.1 100 16.3 dB OUT PAE P 43 dBm 31.5 11.6 30.7 % OUT Note: 1 P is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA SAT Features Applications 24 dB Small Signal Gain Ultra Broadband Amplifiers 25 W Typical P Fiber Drivers SAT Operation up to 28 V Test Instrumentation High Breakdown Voltage EMC Amplifier Drivers High Temperature Operation Figure 1. Rev 3.1 April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCMPA2560025F 2 Absolute Maximum Ratings (not simultaneous) at 25C Parameter Symbol Rating Units Drain-source Voltage V 84 VDC DSS Gate-source Voltage V -10, +2 VDC GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Forward Gate Current I 13 mA G Screw Torque T 40 in-oz Thermal Resistance, Junction to Case R 2.5 C/W JC Electrical Characteristics (Frequency = 2.5 GHz to 6.0 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 20 mA (GS)TH DS D Gate Quiescent Voltage V -2.7 VDC V = 28 V, I = 1200 mA (GS)Q DD D Drain-Source Breakdown Voltage V 84 100 V V = -8 V, I = 20 mA BD GS D 1 Saturated Drain Current I 8.0 9.7 A V = 6.0 V, V = 2.0 V DC DS GS 2 RF Characteristics Small Signal Gain S21 19.5 24 dB V = 28 V, I = 1200 mA DD D Input Return Loss S11 -8 -5 dB V = 28 V, I = 1200 mA DD D Output Return Loss S22 -8 -3 dB V = 28 V, I = 1200 mA DD D Power Output P 22.0 30 W V = 28 V, I = 1200 mA, P = 26 dBm, Freq = 4.0 GHz 1 OUT DD D IN Power Output P 12.5 17 W V = 28 V, I = 1200 mA, P = 26 dBm, Freq = 5.0 GHz 2 OUT DD D IN Power Output P 15.5 20 W V = 28 V, I = 1200 mA, P = 26 dBm, Freq = 6.0 GHz 3 OUT DD D IN Power Added Efficiency PAE 34 40 % V = 28 V, I = 1200 mA, P = 26 dBm, Freq = 4.0 GHz 1 DD D IN Power Added Efficiency PAE 20 26 % V = 28 V, I = 1200 mA, P = 26 dBm, Freq = 5.0 GHz 2 DD D IN Power Added Efficiency PAE 24 30 % V = 28 V, I = 1200 mA, P = 26 dBm, Freq = 6.0 GHz 3 DD D IN Power Gain G 17.5 18.8 dB V = 28 V, I = 1200 mA, P = 26 dBm, Freq = 4.0 GHz 1 P DD D IN Power Gain G 15.0 16.3 dB V = 28 V, I = 1200 mA, P = 26 dBm, Freq = 5.0 GHz 2 P DD D IN Power Gain G 16.0 17.0 dB V = 28 V, I = 1200 mA, P = 26 dBm, Freq = 6.0 GHz 3 P DD D IN No damage at all phase angles, Output Mismatch Stress VSWR 5 : 1 Y V = 28 V, I = 1200 mA, P = 26 dBm DD DQ IN Notes: 1 Scaled from PCM data 2 All data CW tested in CMPA2560025F-AMP Rev 3.1 April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com