CMPA601C025F 25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier Description The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 m gate length fabrication process. The semiconductor offers 25 Watts of power from 6 to 12 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and superior PN: CMPA601C025F efficiency in a small footprint package at 50 ohms. Package Type: 440213 Typical Performance Over 6.0-12.0 GHz (T = 25C) C Parameter 6.0 GHz 7.5 GHz 9.0 GHz 10.5 GHz 12.0 GHz Units Small Signal Gain 35 34 34 37 31 dB P P = 22 dBm 34 51 49 45.9 36.5 W OUT IN Power Gain P = 22 dBm 23 25 25 25 23.5 dB IN PAE P = 22 dBm 21 36 35 33 27 % IN Note: All data CW Features Applications 34 dB Small Signal Gain Jamming Amplifiers 40 W Typical P Test Equipment Amplifiers SAT Operation up to 28 V Broadband Amplifiers High Breakdown Voltage High Temperature Operation Size 0.172 x 0.239 x 0.004 inches Rev 4.1 April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCMPA601C025F 2 Absolute Maximum Ratings (not simultaneous) at 25C Parameter Symbol Rating Units Conditions Drain-source Voltage V 84 V 25C DS DC Gate-source Voltage V -10, +2 V 25C GS DC Storage Temperature T -40, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 23 mA 25C GMAX 1 Soldering Temperature T 245 C STG Screw Torque T 40 in-oz 2 Thermal Resistance, Junction to Case R 0.85 C/W 85C P = 116 W JC DISS 2 Case Operating Temperature T -40, +150 C C Notes: 1 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library 2 See also, the Power Dissipation De-rating Curve on page 4 Electrical Characteristics (Frequency = 6.0 GHz to 12.0 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1,2 DC Characteristics Gate Threshold V -3.8 -2.8 -2.3 V V = 10 V, I = 23 mA TH DS D Saturated Drain Current I 10.6 13.0 A V = 6 V, V = 2 V DS DS GS Drain-Source Breakdown Voltage V 84 100 V V = -8 V, I = 23 mA BD GS DS 3 RF Characteristics V = 28 V, I = 2 A, P = -30 dBm, DD DQ IN Small Signal Gain S21 28 31 dB Frequency = 6.0 - 10.5 GHz V = 28 V, I = 2 A, P = -30 dBm, DD DQ IN Small Signal Gain S21 25 28 dB Frequency = 10.5 - 12 GHz 3,4 Output Power P 45.5 47.2 dBm V = 28 V, I = 2 A, P = 22 dBm, Freq = 6 GHz OUT1 DD DQ IN 3,4 Output Power P 45.5 47.1 dBm V = 28 V, I = 2 A, P = 22 dBm, Freq = 9.5 GHz OUT2 DD DQ IN 3,4 Output Power P 43.0 44.8 dBm V = 28 V, I = 2 A, P = 22 dBm, Freq = 12 GHz OUT3 DD DQ IN 3,4 Power Added Efficiency PAE 23 33.2 % V = 28 V, I = 2 A, P = 22 dBm, Freq = 6 GHz 1 DD DQ IN 3,4 Power Added Efficiency PAE 26 32.3 % V = 28 V, I = 2 A, P = 22 dBm, Freq = 9.5 GHz 2 DD DQ IN 3,4 Power Added Efficiency PAE 15.5 26.5 % V = 28 V, I = 2 A, P = 22 dBm, Freq = 12 GHz 3 DD DQ IN Input Return Loss S11 -5 dB V = 28 V, I = 2 A, P = -30 dBm DD DQ IN Output Return Loss S22 -5 dB V = 28 V, I = 2 A, P = -30 dBm DD DQ IN No damage at all phase angles, Output Mismatch Stress VSWR 5:1 VSWR Y V = 28 V, I = 2 A, P = 22 dBm DD DQ IN Notes: 1 Measured on-wafer prior to packaging 2 Scaled from PCM data 3 Measured in CMPA601C025F-AMP with 12.4 GHz low pass filter 4 Fixture loss de-embedded using the following offsets. The offset is subtracted from the input offset value and added to the output offset value. a) 6.0 GHz - 0.13 dB b) 9.50 GHz - 0.26 dB c) 12.0 GHz - 0.35 dB Rev 4.1 April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com