MTP3N50E XON.COM

MTP3N50E Designers Data Sheet TMOS EFET. High Energy Power FET N Channel EnhancementMode Silicon Gate MTP3N50E MAXIMUM RATINGS (T = 25C unless otherwise noted) C Rating Symbol Value Unit DrainSource Voltage V 500 Vdc DSS DrainGate Voltage (R = 1.0 M) V 500 Vdc GS DGR GateSource Voltage Continuous V 20 Vdc GS GateSource Voltage Nonrepetitive (t 50 s) V 40 Vpk p GSM Drain Current Continuous I 3.0 Adc D I 10 Drain Current Pulsed DM Total Power Dissipation T = 25C P 50 Watts C D Derate above 25C 0.4 W/C Operating and Storage Temperature Range T , T 65 to 150 C J stg UNCLAMPED DRAIN TOSOURCE AVALANCHE CHARACTERISTICS (T < 150C) J Single Pulse DraintoSource Avalanche Energy T = 25C W (1) 210 mJ J DSR Single Pulse DraintoSource Avalanche Energy T = 100C 33 J Repetitive Pulse DraintoSource Avalanche Energy W (2) 5.0 DSR THERMAL CHARACTERISTICS Thermal Resistance Junction to Case R 2.5 C/W JC Junction to Ambient R 62.5 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T 260 C L (1) V = 50 V, I = 3.0 A DD D (2) Pulse Width and frequency is limited by T (max) and thermal response J Designers Data for Worst Case Conditions The Designers Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate worst case design. Preferred devices are Motorola recommended choices for future use and best overall value.