Product Specification
IXD5120
Ultra Small, Low Power Consumption Voltage Detector
FEATURES DESCRIPTION
Accuracy 2% at V 1.5 V or 0.03 V The IXD5120 are highly precise, low power
DF
Low Power Consumption at 0.6 A typical
consumption, CMOS voltage detectors,
at V = 2.7 V, V = 2.97 V
DF IN
manufactured using laser trimming technology.
Detect Voltage Range 0.7 V 5.0 V in 0.1 V
With low power consumption and high accuracy, the
increments
series is suitable for precision mobile equipment.
Operating Voltage Range 0.7 V 6.0 V
0
The IXD5120 in ultra small packages are ideally
Detect Voltage Temperature Drift 100 ppm/ C
suited for high-density PC boards.
Output Configuration CMOS (Version C) or N-
channel Open Drain (N Version)
The IXD5120 is available in both CMOS and N-
0
Operating Ambient Temperature - 40 + 85 C
channel open drain output configurations
Packages : USP-3 and SSOT-24
Detector is available in USP-3 and SSOT-24
EU RoHS Compliant, Pb Free
packages.
APPLICATIONS
Microprocessor reset circuitry
Memory battery back-up circuits
Power-on reset circuits
Power failure detection
System battery life and charge voltage monitors
TYPICAL APPLICATION CIRCUIT TYPICAL PERFORMANCE CHARACTERISTIC
Pull-up Resistor R used with N-channel output configuaration only Supply Current vs. Input Voltage
PL
IXD5120x272xx
PS034301-0515 PRELIMINARY 1 Product Specification
IXD5120
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNITS
Input Voltage V 0.3 ~ +7.0 V
IN
Output Current I 10 mA
OUT
CMOS Output V 0.3 ~ V + 0.3 V
OUT IN
Output
Voltage
N-channel Open Drain 0.3 ~ +7.0 V
USP-3 120
2)
Power Dissipation P mW
D
SSOT-24 150
0
Operating Temperature Range T 40 ~ + 85 C
OPR
0
Storage Temperature Range T 55 ~ +125 C
STG
All voltages are in respect to V
SS
ELECTRICAL OPERATING CHARACTERISTICS
0
Ta = 25 C
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT CIRCUIT
1)
Operating Voltage V V = 1.0 5.0 V 0.7 6.0 V
IN DF(T)
2)
Detect Voltage V V = 1.0 5.0 V E-1 V
DF DF(T)
V x V x V x
DF DF DF
Hysteresis Width V V = 1.0 5.0 V V
HYS DF(T)
0.03 0.05 0.07
2)
Supply Current1 I V = V x 1.1 E-2 A
SS1 IN DF(T)
2)
Supply Current2 I V = V x 0.9 E-3 A
SS2 IN DF(T)
V = 0.5 V 0.09 0.57
OUT
V = 0.7 V V = 0.3 V 0.08 0.56
IN OUT
VOUT = 0.1 V 0.05 0.30
I V = 1.0 V V = 0.1 V, 1.0 V < V 2.0 V 0.46 0.71
OUTN IN OUT DF(T)
Output Current mA
V = 2.0 V V = 0.1 V, 2.0 V < V 3.0 V 1.15 1.41
IN OUT DF(T)
V = 3.0 V V = 0.1 V, 3.0 V < V 4.0 V 1.44 1.77
IN OUT DF(T)
V = 4.0 V V = 0.1 V, 4.0 V < V 1,61 1.96
IN OUT DF(T)
3)
I V = 6.0 V V = 5.5 V -0.96 -0.60
OUTP IN OUT
Version C V = V x 0.9, V = 0 V -0.001
IN DF(T) OUT
Leakage Current I A
LEAK
Version N V = 6.0 V, V = 6.0 V 0.001 0.10
IN OUT
Detect Voltage
0 0 0
Temperature - 40 C TOPR 85 C 100 ppm/ C
Characteristics
4)
100
Detect Delay Time t 30 s
DF V = 6.0 V 0.7 V, from V = V to V = 0.5 V
IN IN DF OUT
5) 6)
100
Release Delay Time t V = 0.7 V 6.0 V, from V = V to V = V 20 s
DR IN IN DR OUT DR
NOTE:
1) V ) is a nominal detect voltage
DF(T
2) Please refer to the table named Detect Voltage Accuracy and Supply Current Specifications
3) IXD5120C version only
4) Delay time from the moment, when V = V to the moment, when V = 0.5 V, at V falling from 6.0 V to 0.7 V
IN DF OUT IN
5) Delay time from the moment, when V = V to the moment, when V = V
IN DR OUT DR
6) Release voltage (V = V + V )
DR DF HYS
PS033801-0515 PRELIMINARY 2