JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK1658 N-channel MOSFET I V R MAX D (BR)DSS DS(on) SOT-323 10 4 V 3 0 V 100m A 15 2.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION z Interfacing , Switching z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for Portable equipment z Easily designed drive circuits z Easy to parallel Equivalent Circuit MARKING MOSFET MAXIMUM RATINGS (Ta = 25C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source voltage 30 V VGS Gate-Source Voltage 7 V Continuous Drain Current 0.1 A ID PD Power Dissipation 0.2 W Junction Temperature 150 TJ -55-150 Tstg Storage Temperature 625 /W RJA Thermal Resistance from Junction to Ambient Rev. - 1.0 www.jscj-elec.com 1 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage V(BR)DS S VGS = 0V, ID = 10A 30 V Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V 1 A Gate Source leakage current IGSS VGS =3V, VDS = 0V 1 A Gate Cut-off Voltage VGS(off) VDS = 3V, ID =1A 0.9 1.5 V VGS = 4V, ID =10mA 10 5 Drain-Source On-Resistance RDS(on) VGS =2.5V,ID =10mA 7 15 Forward Transconductance gFS VDS =3V, ID = 10mA mS 20 Dynamic Characteristics* Input Capacitance Ciss 15 pF Output Capacitance Coss VDS =3V,VGS =0V,f =1MHz 10 pF Reverse Transfer Capacitance Crss 1.5 pF Switching Characteristics* Turn-On Delay Time td(on) ns 50 Rise Time tr VGS =3V, VDD =3V, 23 ns Turn-Off Delay Time td(off) ID =10mA, Rg=10, RL=300 ns 34 Fall Time tf 43 ns *These parameters have no way to verify. www.jscj-elec.com Rev. - 1.0 2