JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8804 Dual N-Channel MOSFET TSSOP8 I V R TYP D (BR)DSS DS(on) 9.8 4 10.5 11 .1 8A 13.3 2 19.6 DESCRIPTION The CJS8804 use advanced trench technology to provide excellent and low gate charge. It is ESD protected. This device is suitable R DS(ON) for use as a uni-directional or bi-directional load switch,facilitated by s it common-drain configuration. Equivalent Circuit MARKING: D1/D2 S2 S2 G2 6 7 5 8 LOT No. 1 34 2 D1/D2 S1 S1 G1 MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current I 8 A D Pulsed Drain Current I * 30 A DM Thermal Resistance from Junction to Ambient R 62.5 /W JA Junction Temperature T 150 j Storage Temperature T -55~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T 260 L * Repetitive rating : Pulse width limited by junction temperature. www.jscj-elec.com 1 Rev. - 1.0 T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250A 20 V Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 10 A Gate-body leakage current IGSS VGS =10V, VDS = 0V 10 A Gate threshold voltage (note 1) VGS(th) VDS =V , ID =250A 0.5 1 V GS VGS =10V, ID =8A 9.8 13 m VGS =4.5V, ID =5A 10.5 14 m 11.1 Drain-source on-resistance (note 1) RDS(on) VGS =3.8V, ID =5A 15.5 m 13.3 VGS =2.5V, ID =4A 19 m 19.6 VGS =1.8V, ID =3A 27 m S Forward tranconductance (note 1) gFS VDS =5V, ID =8A 17 Diode forward voltage(note 1) V I =1A, VGS = 0V 1 V SD S DYNAMIC PARAMETERS (note 2) Input Capacitance C 1800 pF iss Output Capacitance C VDS =10V,VGS =0V,f =1MHz 230 pF oss Reverse Transfer Capacitance C 200 pF rss nC Total gate charge Q 17.9 g Gate-source charge Q VDS =10V,VGS =4.5V,ID =8A 1.5 nC gs Gate-drain charge Q 4.7 nC gd SWITCHING PARAMETERS(note 2) Turn-on delay time td(on) 2.5 ns Turn-on rise time tr V =10V,V =10V, 7.2 ns GS DS R =1.2 ,R =3 Turn-off delay time td(off) L GEN 49 ns Turn-off fall time tf 10.8 ns Notes : 1. Pulse Test : Pulse width 300s, duty cycle 0.5%. 2. Guaranteed by design, not subject to production testing. www.jscj-elec.com 2 Rev. - 1.0