JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1206 P-Channel Power MOSFET DFNWB2*2-6L-J I V R MAX D (BR)DSS DS(on) m 45 -4.5V 1. DRAIN 2. DRAIN 60 m -6A -12V -2.5V 3. GATE m -1.8V 90 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The CJM1206 uses advanced trench technology to provide excellent R low gate charge and operation with low gate voltage. DS(on) , . This device is suitable for use as a load switching application and a wide variety of other applications. APPLICATIONS FEATURES PWM application Advanced trench MOSFET process technology Load switch Ultra low on-resistance with low gate charge Battery charge in cellular handset Equivalent Circuit 0 5.,1* Maximum ratings (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V -12 DS V Gate-Source Voltage V 8 GS Drain Current-Continuous I -6 D A Drain Current-Pulsed I -20 DM * Thermal Resistance from Junction to Ambient R 357 /W JA Junction Temperature T 150 j Storage Temperature T -55 ~+150 STG *Repetitive ratingPluse width limited by junction temperature. www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS unless otherwise specified T =25 a Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250A -12 V Gate-source threshold voltage VGS(th) VDS =V , ID =-250A -0.5 GS - 0.9 100 Gate-source leakage I VDS =0V, VGS =8V nA GSS -1 Zero gate voltage drain current I VDS =-8V, VGS =0V A DSS VGS =-4.5V, ID =-3.5A 30 45 a Drain-source on-state resista Rnce DS(on) VGS =-2.5V, ID =-3A 40 60 m 60 VGS =-1.8V,ID=-2.0A 90 a Forward transconductance gfs VDS =-5V, ID =-4.1A 6 S Dynamic b,c Input capacitance C 740 iss b,c Output capacitance C VDS =-4V,VGS =0V,f =1MHz 290 pF oss b,c Reverse transfer capacitance C 190 rss VDS =-4V,VGS =-4.5V, 7.8 15 b Total gate charge Q ID =-4.1A g 4.5 9 nC VDS =-4V,VGS =-2.5V, b Gate-source charge Q 1.2 gs I =-4.1A D b Gate-drain charge Q 1.6 gd b,c Gate resistance R f =1MHz 1.4 7 14 g b,c Turn-on delay time td(on) 13 20 V =-4V, DD b,c Rise time tr 35 53 R =1.2, ID -3.3A, L b,c Turn-off Delay time td(off) 32 48 V =-4.5V,Rg=1 GEN b,c Fall time tf 10 20 ns b,c Turn-on delay time td(on) 5 10 V =-4V, DD b,c Rise time tr 11 17 R =1.2, ID -3.3A, L b,c Turn-off delay time td(off) 22 33 V =-8V,Rg=1 GEN b,c Fall time tf 16 24 Drain-source body diode characteristics -6 Continuous source-drain diode current I S A a Pulse diode forward current I -20 SM Body ciode voltage V I =-3.3A -1.2 V SD F Note : a. Pulse Test Pulse Width 300s, Duty Cycle 2%. b. Guaranteed by design, not subject to production testing. c. These parameters have no way to verify. www.jscj-elec.com 2 Rev. - 1.0