X-On Electronics has gained recognition as a prominent supplier of CJAB40N03 MOSFETs across the USA, India, Europe, Australia, and various other global locations. CJAB40N03 MOSFETs are a product manufactured by Changjing Electronics Technology. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CJAB40N03 Changjing Electronics Technology

CJAB40N03 electronic component of Changjing Electronics Technology
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See Product Specifications
Part No.CJAB40N03
Manufacturer: Changjing Electronics Technology
Category: MOSFETs
Description: MOSFET N Channel 30V 40A 2.5V @ 250uA 6.5mO @ 20A,10V PDFNWB3.3x3.3-8L RoHS
Datasheet: CJAB40N03 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3093 ea
Line Total: USD 0.31 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3093
10 : USD 0.254
30 : USD 0.2302
100 : USD 0.2006
500 : USD 0.1875
1000 : USD 0.1797

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif
 
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We are delighted to provide the CJAB40N03 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CJAB40N03 and other electronic components in the MOSFETs category and beyond.

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40N03 N-Channel Power MOSFET I V R MAX D (BR)DSS DS(on) PDFNWB3.33.3-8L 10 V 6.5 m 3 0 V 40A 10.5m 4.5V DESCRIPTION The CJAB40N03 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used in a DS(ON) wide variety of applications FEATURES Battery switch Good stability and uniformity with high E AS Load switch Excellent package for good heat dissipation High density cell design for ultra low R Special process technology for high ESD DS(ON) Fully characterized avalanche voltage and capability current APPLICATIONS SMPS and general purpose applications Uninterruptible Power Supply Hard switched and high frequency circuits MARKING EQUIVALENT CIRCUIT D D D D 8 7 6 5 CJAB40N03 = Part No. CJAB Solid dot=Pin1 indicator 40N03 XX XX=Date Code 1 2 3 4 S S S G MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Parameter Symbol Limit Unit Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 40 A D Pulsed Drain Current I 160 A DM (1) Single Pulsed Avalanche Energy E 270 mJ AS Power Dissipation P 3 W D Thermal Resistance from Junction to Ambient R 41.67 /W JA Junction Temperature T 150 J Storage Temperature Range T -55 ~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10s) TL 260 (1).E condition: V =15V,L=0.1mH, R =25, Starting T = 25C AS DD G J (2).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt Rev. - 1.0 www.jscj-elec.com 1 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250A 30 V 1 Zero gate voltage drain current I VDS =24V, VGS =0V A DSS 100 Gate-body leakage current I VDS =0V, VGS =20V nA GSS On characteristics (note1) Gate-threshold voltage VGS(th) VDS =V , ID =250A 1.0 1.5 2.5 V GS VGS =10V, ID =20A 6.5 m 4.5 Static drain-source on-sate resistance RDS(on) VGS =4.5V, ID =20A 7.2 10.5 m 24 Forward transconductance g VDS =10V, ID =20A S FS Dynamic characteristics (note 2) Input capacitance C 2000 iss VDS =25V,VGS =0V, Output capacitance C 228 pF oss f =1MHz Reverse transfer capacitance C 155 rss Switching characteristics (note 2) Total gate charge Q 50 g V =25V, V =10V, DS GS nC Gate-source charge Q 3 gs I =10A D Gate-drain charge Q gd 18 Turn-on delay time td 12 (on) Turn-on rise time tr 36 V =15V,ID=10A, DS ns V =10V,R =3 GS G Turn-off delay time td(off) 49 Turn-off fall time tf 12 Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) V VGS =0V, I =20A 1.2 V SD S Continuous drain-source diode forward I 40 A S current Pulsed drain-source diode forward current I 160 A SM Notes: 1. Pulse Test : Pulse Width300s, duty cycle 2%. 2. Guaranteed by design, not subject to production. Rev. - 1.0 www.jscj-elec.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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