Product Information

PI2DBS212ZHE

PI2DBS212ZHE electronic component of Diodes Incorporated

Datasheet
Pericom Video Switch ICs 2-channel Diffrntl Broadband Switch

Manufacturer: Diodes Incorporated
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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PI2DBS212ZHE
Diodes Incorporated

1 : USD 1.9958
10 : USD 1.7929
490 : USD 1.3527
980 : USD 1.1836
1470 : USD 0.9807
N/A

Obsolete
0 - WHS 2

MOQ : 490
Multiples : 1

Stock Image

PI2DBS212ZHE
Diodes Incorporated

490 : USD 1.129
N/A

Obsolete
0 - WHS 3


Multiples : 490

Stock Image

PI2DBS212ZHE
Diodes Incorporated

N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

Stock Image

PI2DBS212ZHE
Diodes Incorporated

1 : USD 2.2899
10 : USD 1.844
100 : USD 1.4703
500 : USD 1.2896
1000 : USD 1.0666
N/A

Obsolete
     
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RoHS - XON
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Mxhts
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PI2DBS6212 6.5 Gbps SAS2, SATA3, XAUI 2 Differential Channel, 2:1 Mux/DeMux Switch Features Description SAS2, SATA3, XAUI switch Pericom Semiconductor s PI2DBS6212 is a 4 to 2 bi-directional differential channel multiplexer/demultiplexer switch support- 2 Differential Channel, 2:1 Mux/DeMux ing 6.5 Gbps applications. Due to its low bit-to-bit skew, high 6.5 Gbps performance channel-to-channel noise isolation and high bandwidth, this Bi-directional operation product is ideal for switching two sources to a single receiver, or Low Bit-to-Bit Skew, 6ps max alternatively, one source to two receivers. Low Insertion Loss: -2.3dB 3GHz(6Gbps) Low Crosstalk: -43dB 3GHz (6.0Gbps) Low Off Isolation: -21dB 3GHz (6.0Gbps) Application V Operating Range: 1.5V to 1.8V, 0.1V DD - SAS2, SATA3, XAUI, Infiniband, Hype Transport, Rapid I/O ESD Tolerance 2KV HBM I/O - Computers, servers, storage, instrumentation, telecom, network- Packaging: 28 contact TQFN (ZH, 3.5 5.5mm) ing. Pin Description Block Diagram A0+ B0+ 28 27 26 25 1 B0+ GND 24 A0- B0- 2 B0- NC 23 A1+ B1+ 3 B1+ SEL 22 A1- B1- 4 B1- 21 AO+ 5 GND AO- 20 C0+ GND 6 A1+ 19 V DD C0- 7 A1- 18 C0+ C1+ 8 17 C0- NC C1- 9 16 V C1+ DD 10 15 GND C1- 11 12 13 14 SEL Truth Table Function SEL A to B L A to C H 11-0147 PS9870C 04/06/11 1 V DD V DD GND GND V DD V DD GND GNDPI2DBS6212 6.0 Gbps SAS2, SATA3, XAUI 2 Differential Channel, 2:1 Mux/DeMux Switch Maximum Ratings (Above which useful life may be impaired. For user guidelines, not tested.) Storage Temperature ......................................... 65C to +150C Note: Stresses greater than those listed under MAXIMUM RATINGS Supply Voltage to Ground Potential .................... 0.5V to +2.5V may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions DC Input Voltage ................................................. 0.5V to +V DD above those indicated in the operational sections of this specification DC Output Current ........................................................... 120mA is not implied. Exposure to absolute maximum rating conditions for Power Dissipation ................................................................ 0.5W extended periods may affect reliability. Power Supply Characteristics (1) (2) Parameters Description Test Conditions Min. Typ. Max. Units I Quiescent Power Supply Current V = Max., V = GND or V 200 400 A CC DD IN DD Notes: 1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at V = 1.8V, T = 25C ambient and maximum loading. DD A DC Electrical Characteristics for Switching over Operating Range (T = 40C to +85C, V = 1.5V to 1.8V) A DD Parameter Description Test Conditions Min. Typ. Max. Units V Input HIGH Voltage, SEL input Guaranteed HIGH level 0.65 x V - - IH DD V Input LOW Voltage, SEL input Guaranteed LOW level -0.5 - 0.35 x V V IL DD V Clamp Diode Voltage, SEL input V = Max., I = 18mA - -0.7 -1.2 IK DD IN I Input HIGH Current for SEL V = Max., V = V -10 - +10 IH DD IN DD I Channel Leakage Current V = Max., V = 1.8V -10 - +10 A OZ DD IN I Input LOW Current V = Max., V = GND -20 - +10 IL DD IN -0.5 2.5 V /V > 95%, R = 10K O I L V DC DC Signal Voltage Range V I V /V > 80%, R = 50-Ohms O I L -0.4 1.2 Switching Characteristics (T = -40 to +85C, V = 1.5V to 1.8V) A DD Parameter Description Min. Typ. Max. Units t , t Line Enable Time - SEL to A , B C 0.5 - 9.0 PZH PZL N N, N ns t , t Line Disable Time - SEL to A , B C 0.5 - 9.0 PLZ PHZ N N, N t 10 b-b Bit-to-bit skew within the same differential pair t 15 ps ch-ch Channel-to-channel skew t A to B or C 20 diff Differential delay - N N N Notes: 1. For max. or min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type. 11-0147 PS9870C 04/06/11 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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